Nanotubes in nanoelectronics: transport, growth and modeling

被引：10

作者：

Anantram, M ^{[1
]}

Delzeit, L ^{[1
]}

Cassell, A ^{[1
]}

Han, J ^{[1
]}

Meyyappan, M ^{[1
]}

机构：

[1] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2001年 / 11卷 / 2-3期

关键词：

nanotubes; ballistic transport; chemical vapour deposition;

D O I：

10.1016/S1386-9477(01)00187-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Carbon nanotube based nanotechnology appears to be Promising for future nanoelectronics. Theoretical analysis and results for the ballistic current carrying capacity of nanotube wires are presented. Aspects of metal-nanotube coupling are examined. Results are also presented for chemical vapor deposition of CNT from hydrocarbon feedstock. (C) 2001 Elsevier Science B.V. All rights reserved.

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页码：118 / 125

页数：8

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