RFCMOS ESD protection and reliability

被引：13

作者：

Natarajan, MI ^{[1
]}

Linten, D ^{[1
]}

Thijs, S ^{[1
]}

Jansen, P ^{[1
]}

Trémouilles, D ^{[1
]}

Jeamsaksiri, W ^{[1
]}

Nakaie, T ^{[1
]}

Sawada, M ^{[1
]}

Hasebe, T ^{[1
]}

Decoutere, S ^{[1
]}

Groeseneken, G ^{[1
]}

机构：

[1] IMEC vzw, B-3001 Louvain, Belgium

来源：

IPFA 2005: PROCEEDINGS OF THE 12TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2005年

关键词：

D O I：

10.1109/IPFA.2005.1469132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：59 / 66

页数：8

共 19 条

[11] A 5 GHz CMOS low-noise amplifier with inductive ESD protection exceeding 3 kV HBM [J].

Leroux, P ;

Steyaert, M .

ESSCIRC 2004: PROCEEDINGS OF THE 30TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2004, :295-298

[12] A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS [J].

Linten, D ;

Thijs, S ;

Natarajan, MI ;

Wambacq, P ;

Jeamsaksiri, W ;

Ramos, J ;

Mercha, A ;

Jenei, S ;

Donnay, S ;

Decoutere, S .

ESSCIRC 2004: PROCEEDINGS OF THE 30TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2004, :291-294

[13] Low-power 5 GHz LNA and VCO in 90 nm RF CMOS [J].

Linten, D ;

Aspemyr, L ;

Jeamsaksiri, W ;

Ramos, J ;

Mercha, A ;

Jenei, S ;

Thijs, S ;

Garcia, R ;

Jacobsson, H ;

Wambacq, P ;

Donnay, S ;

Decoutere, S .

2004 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2004, :372-375

[14]

RADHAKRISHNAN MK, 2001, P INT WORKSH PHYS SE, P551

[15] Investigation on different ESD protection strategies devoted to 3.3 V RF applications (2 Ghz) in a 0.18um CMOS process [J].

Richier, C ;

Salome, P ;

Mabboux, G ;

Zaza, I ;

Juge, A ;

Mortini, P .

ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS, 2000, 2000, :251-259

[16] A 1.5-V, 1.5-GHz CMOS low noise amplifier [J].

Shaeffer, DK ;

Lee, TH .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (05) :745-759

[17]

THIJS S, 2004, P EOS ESD S, P40

[18] ESD-RF co-design methodology for the state of the art RF-CMOS blocks [J].

Vassilev, V ;

Thijs, S ;

Segura, PL ;

Wambacq, P ;

Leroux, P ;

Groeseneken, G ;

Natarajan, MI ;

Maes, HE ;

Steyaert, M .

MICROELECTRONICS RELIABILITY, 2005, 45 (02) :255-268

[19]

Velghe R.M. D. A., 2001, EOSESD S PROC, P337

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