Inkjet printing of single-walled carbon nanotube thin-film transistors patterned by surface modification

被引:29
作者
Nobusa, Yuki [1 ]
Yomogida, Yohei [2 ]
Matsuzaki, Satoki [1 ]
Yanagi, Kazuhiro [3 ]
Kataura, Hiromichi [4 ,5 ]
Takenobu, Taishi [1 ,4 ,6 ]
机构
[1] Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
[2] Tohoku Univ, Grad Sch Sci, Dept Phys, Sendai, Miyagi 9808578, Japan
[3] Tokyo Metropolitan Univ, Dept Phys, Tokyo 1920397, Japan
[4] Japan Sci & Technol Agcy JST, CREST, Saitama 3320012, Japan
[5] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan
[6] Japan Sci & Technol Agcy JST, PRESTO, Saitama 3320012, Japan
关键词
FIELD-EFFECT TRANSISTORS; INTEGRATED-CIRCUITS; PERFORMANCE; TRANSPARENT; ARRAYS;
D O I
10.1063/1.3657502
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, we report a method for the inkjet printing of single-walled carbon nanotube thin-film transistors (SWCNT TFTs). Although inkjet technology is a powerful tool for the fabrication of SWCNT TFTs, the diameter of the ink droplets (100 mu m) strictly limits the device size. Here, we surmount this limitation by combining inkjet technology and site-selective deposition based on the patterning of self-assembled monolayers. We have synthesized patterned SWCNT films with feature widths less than 100 mu m using this site-selective surface modification method, thus improving the performance limit of SWCNT printed electronics. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3657502]
引用
收藏
页数:3
相关论文
共 18 条
  • [11] Tunable Carbon Nanotube Thin-Film Transistors Produced Exclusively via Inkjet Printing
    Okimoto, Haruya
    Takenobu, Taishi
    Yanagi, Kazuhiro
    Miyata, Yasumitsu
    Shimotani, Hidekazu
    Kataura, Hiromichi
    Iwasa, Yoshihiro
    [J]. ADVANCED MATERIALS, 2010, 22 (36) : 3981 - 3986
  • [12] Ink-Jet Printing of a Single-Walled Carbon Nanotube Thin Film Transistor
    Okimoto, Haruya
    Takenobu, Taishi
    Yanagi, Kazuhiro
    Miyata, Yasumitsu
    Kataura, Hiromichi
    Asano, Takeshi
    Iwasa, Yoshihiro
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (06) : 06FF031 - 06FF034
  • [13] Device physics of Solution-processed organic field-effect transistors
    Sirringhaus, H
    [J]. ADVANCED MATERIALS, 2005, 17 (20) : 2411 - 2425
  • [14] Random networks of carbon nanotubes as an electronic material
    Snow, ES
    Novak, JP
    Campbell, PM
    Park, D
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (13) : 2145 - 2147
  • [15] Sun DM, 2011, NAT NANOTECHNOL, V6, P156, DOI [10.1038/nnano.2011.1, 10.1038/NNANO.2011.1]
  • [16] High-performance transparent flexible transistors using carbon nanotube films
    Takenobu, T
    Takahashi, T
    Kanbara, T
    Tsukagoshi, K
    Aoyagi, Y
    Iwasa, Y
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (03) : 1 - 3
  • [17] Radio Frequency and Linearity Performance of Transistors Using High-Purity Semiconducting Carbon Nanotubes
    Wang, Chuan
    Badmaev, Alexander
    Jooyaie, Alborz
    Bao, Mingqiang
    Wang, Kang L.
    Galatsis, Kosmas
    Zhou, Chongwu
    [J]. ACS NANO, 2011, 5 (05) : 4169 - 4176
  • [18] Transparent, conductive carbon nanotube films
    Wu, ZC
    Chen, ZH
    Du, X
    Logan, JM
    Sippel, J
    Nikolou, M
    Kamaras, K
    Reynolds, JR
    Tanner, DB
    Hebard, AF
    Rinzler, AG
    [J]. SCIENCE, 2004, 305 (5688) : 1273 - 1276