Strong d-d electron interaction inducing ferromagnetism in Mn-doped LiNbO3

被引:10
作者
Chen, C. [1 ]
Zeng, F. [1 ]
Li, J. H. [1 ]
Sheng, P. [1 ]
Luo, J. T. [1 ]
Yang, Y. C. [1 ]
Pan, F. [1 ]
Zou, Y. [2 ]
Huang, Y. Y. [2 ]
Jiang, Z. [2 ]
机构
[1] Tsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
[2] Shanghai Synchrotron Radiat Facil BL14W1, Shanghai 201204, Peoples R China
关键词
Diluted magnetic semiconductor; Magnetism; XANES; Electronic structure; X-RAY-ABSORPTION;
D O I
10.1016/j.tsf.2011.01.230
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Mn-doped LiNbO3 was prepared by ion beam implantation with Mn content of 1 to 5 at.%. The samples were ferromagnetic. The maximum atomic magnetic moment was 5.83 mu(B)/Mn for the samples with Mn content of 3 at.% in the implanted layer. Structure characterization using X-ray absorption near edge structure determined that the Mn atoms substituted principally the Li atoms in the LiNbO3 lattice. The magnetic mechanism was understood with the aid of electronic structure calculation using local density approximations plus U method. The calculated results demonstrated that the Mn:LiNbO3 with Mn atom on the Li site is half-metallic ferromagnetic. The calculated magnetic moment per cell agreed well with the experimental results. Spin splitting of the d-states occurred for both the Mn dopant and the Nb atoms. The doped Mn atom interacts strongly with its neighboring Nb atoms. This strong d-d electron interaction can work at long range through the whole crystalline cell. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:764 / 768
页数:5
相关论文
共 29 条
  • [11] Co-doped (La,Sr)TiO3-δ:: A high curie temperature diluted magnetic system with large spin polarization -: art. no. 027207
    Herranz, G
    Ranchal, R
    Bibes, M
    Jaffrès, H
    Jacquet, E
    Maurice, JL
    Bouzehouane, K
    Wyczisk, F
    Tafra, E
    Basletic, M
    Hamzic, A
    Colliex, C
    Contour, JP
    Barthélémy, A
    Fert, A
    [J]. PHYSICAL REVIEW LETTERS, 2006, 96 (02)
  • [12] Theoretical study of the magnetism of Mn-doped ZnO with and without defects
    Iusan, D.
    Sanyal, B.
    Eriksson, O.
    [J]. PHYSICAL REVIEW B, 2006, 74 (23)
  • [13] Effects of cation d states on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductors
    Janotti, Anderson
    Segev, David
    Van de Walle, Chris G.
    [J]. PHYSICAL REVIEW B, 2006, 74 (04)
  • [14] Size-dependent induced magnetism in carbon-doped ZnO nanostructures
    Kwak, Hyunwook
    Chelikowsky, James R.
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (26)
  • [15] Long-ranged and high temperature ferromagnetism in (Mn,C)-codoped ZnO studied by first-principles calculations
    Lin, Xue-ling
    Yan, Shi-shen
    Zhao, Ming-wen
    Hu, Shu-jun
    Yao, Xin-xin
    Han, Chong
    Chen, Yan-xue
    Liu, Guo-lei
    Dai, You-yong
    Mei, Liang-mo
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (03)
  • [16] Room-temperature ferromagnetism in the Co-doped Ba0.5Sr0.5TiO3 thin films
    Luo, L. B.
    Zhao, Y. G.
    Tian, H. F.
    Yang, J. J.
    Zhang, H. Y.
    Li, J. Q.
    Ding, J. J.
    He, B.
    Wei, S. Q.
    Gao, C.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (23)
  • [17] Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide
    Matsumoto, Y
    Murakami, M
    Shono, T
    Hasegawa, T
    Fukumura, T
    Kawasaki, M
    Ahmet, P
    Chikyow, T
    Koshihara, S
    Koinuma, H
    [J]. SCIENCE, 2001, 291 (5505) : 854 - 856
  • [18] First-principles study of microscopic properties of the Nb antisite in LiNbO3: Comparison to phenomenological polaron theory
    Nahm, H. H.
    Park, C. H.
    [J]. PHYSICAL REVIEW B, 2008, 78 (18)
  • [19] Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films
    Pan, F.
    Song, C.
    Liu, X. J.
    Yang, Y. C.
    Zeng, F.
    [J]. MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2008, 62 (01) : 1 - 35
  • [20] Room-temperature ferromagnetism in carbon-doped ZnO
    Pan, H.
    Yi, J. B.
    Shen, L.
    Wu, R. Q.
    Yang, J. H.
    Lin, J. Y.
    Feng, Y. P.
    Ding, J.
    Van, L. H.
    Yin, J. H.
    [J]. PHYSICAL REVIEW LETTERS, 2007, 99 (12)