Strong d-d electron interaction inducing ferromagnetism in Mn-doped LiNbO3

被引:10
作者
Chen, C. [1 ]
Zeng, F. [1 ]
Li, J. H. [1 ]
Sheng, P. [1 ]
Luo, J. T. [1 ]
Yang, Y. C. [1 ]
Pan, F. [1 ]
Zou, Y. [2 ]
Huang, Y. Y. [2 ]
Jiang, Z. [2 ]
机构
[1] Tsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
[2] Shanghai Synchrotron Radiat Facil BL14W1, Shanghai 201204, Peoples R China
关键词
Diluted magnetic semiconductor; Magnetism; XANES; Electronic structure; X-RAY-ABSORPTION;
D O I
10.1016/j.tsf.2011.01.230
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Mn-doped LiNbO3 was prepared by ion beam implantation with Mn content of 1 to 5 at.%. The samples were ferromagnetic. The maximum atomic magnetic moment was 5.83 mu(B)/Mn for the samples with Mn content of 3 at.% in the implanted layer. Structure characterization using X-ray absorption near edge structure determined that the Mn atoms substituted principally the Li atoms in the LiNbO3 lattice. The magnetic mechanism was understood with the aid of electronic structure calculation using local density approximations plus U method. The calculated results demonstrated that the Mn:LiNbO3 with Mn atom on the Li site is half-metallic ferromagnetic. The calculated magnetic moment per cell agreed well with the experimental results. Spin splitting of the d-states occurred for both the Mn dopant and the Nb atoms. The doped Mn atom interacts strongly with its neighboring Nb atoms. This strong d-d electron interaction can work at long range through the whole crystalline cell. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:764 / 768
页数:5
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