Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS

被引：14

作者：

Kakushima, K. ^{[1
]}

Okamoto, K. ^{[1
]}

Adachi, M. ^{[1
]}

Tachi, K. ^{[1
]}

Song, J. ^{[1
]}

Sato, S. ^{[1
]}

Kawanago, T. ^{[1
]}

Ahmet, P. ^{[2
]}

Tsutsui, K. ^{[1
]}

Sugii, N. ^{[1
]}

Hattori, T. ^{[2
]}

Iwai, H. ^{[2
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Frontier Res Ctr, Tokyo, Japan

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 19期

关键词：

high-k; flat band voltage; hard X-ray photoemission spectroscopy (HX-PES);

D O I：

10.1016/j.apsusc.2008.02.177

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The flat band voltage shifts of HfO(2)/SiO(2)/nSi capacitors with ultra-thin La(2)O(3) insertion at HfO(2)/SiO(2) interface have been confirmed using hard X-ray photoelectron spectroscopy (HX-PES). By increasing the amount of La(2)O(3) insertion, the binding energy of Si 1s core spectra increases, which means that the surface potential of Si substrate also increases. A voltage drop difference of HfO(2) and La(2)O(3) at SiO(2) interface can be estimated to be 0.40 V. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：6106 / 6108

页数：3

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