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Kinetic specific features of singlet fission in highly anisotropic organic semiconductors
被引:5
|作者:
Shushin, A. I.
[1
]
机构:
[1] RAS, NN Semenov Fed Res Ctr Chem Phys, Kosygin St 4, Moscow 119991, Russia
关键词:
RADICAL PAIR RECOMBINATION;
SPIN-LATTICE-RELAXATION;
TRIPLET EXCITONS;
THIN-FILMS;
ANNIHILATION;
MODEL;
WELL;
D O I:
10.1063/5.0078158
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Kinetics of singlet fission (SF) in molecular semiconductors, i.e., spontaneous splitting of the excited singlet state into a pair of triplet (T) excitons, is known to be strongly affected by geminate annihilation of created TT-pairs. In our work, we analyze in detail the specific properties of SF-kinetics in highly anisotropic molecular crystals (in which T-excitons undergo strongly anisotropic hopping migration) within the earlier proposed two-state model (TSM). This model allows for accurate treatment of the characteristic effects of anisotropic relative migration of T-excitons and TT-interaction on SF-kinetics, describing these effects within the approximation, that assumes kinetic coupling of two states: the [TT] -state of interacting TT-pairs and the [T + T] -state of freely migrating T-excitons. The TSM makes it possible to represent the TT-migration and interaction effects in terms of lattice-migration Green's functions, accurate analytical formulas that are obtained in this work. The TSM is applied to the analysis of SF-kinetics in rubrene single crystals, recently measured in a wide range of times (0.1 ns < t < 10(4) ns). The analysis enables one to obtain important information on specific properties of SF-kinetics in highly anisotropic crystals. In particular, the observed specific "hump" of SF-kinetics at intermediate times can be treated as a manifestation of the TT-coupling in the [TT] - state. It is also found that the characteristic asymptotic time-dependence of SF-kinetics (similar to t(-3/2)) can markedly be distorted by spin relaxation in TT-pairs. Published under an exclusive license by AIP Publishing.
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