Investigation of the reliability of 4H-SiC MOS devices for high temperature applications

被引：37

作者：

Le-Huu, Martin ^{[1
]}

Schmitt, Holger ^{[2
]}

Noll, Stefan ^{[1
]}

Grieb, Michael ^{[1
]}

Schrey, Frederik F. ^{[1
]}

Bauer, Anton J. ^{[2
]}

Frey, Lothar ^{[2
,3
]}

Ryssel, Heiner ^{[2
,3
]}

机构：

[1] Robert Bosch GmbH, D-70839 Gerlingen, Germany

[2] Fraunhofer IISB, D-91058 Erlangen, Germany

[3] Univ Erlangen Nurnberg, Chair Electron Devices, D-91058 Erlangen, Germany

来源：

MICROELECTRONICS RELIABILITY | 2011年 / 51卷 / 08期

关键词：

DEPENDENT DIELECTRIC-BREAKDOWN; FOWLER-NORDHEIM CURRENT; GATE OXIDE; CAPACITORS; SIO2; N2O; INTERFACE; SIC/SIO2; LIFETIME; MOSFETS;

D O I：

10.1016/j.microrel.2011.03.015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the excellent reliability of 4H-SiC MOS devices during high temperature operation is demonstrated for a gate oxide processed in N(2)O. A temperature dependent Fowler-Nordheim analysis is used to show that statistical energy spreading accounts for only part of the reported temperature induced barrier height degradation. Poole-Frenkel current caused by acceptor like traps in the oxide due to carbon interstitials is proposed to be responsible for the additional current observed. Temperature and electric field acceleration of the time to dielectric breakdown is investigated at elevated temperatures in order to predict the expected MOS lifetime during high temperature operation. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：1346 / 1350

页数：5

共 50 条

[21] Development of a 4H-SiC Piezoresistive Pressure Sensor for High Temperature Applications
Fang, Xudong
Wu, Chen
Guo, Xin
Zhao, Libo
Zhao, Yulong
Jiang, Zhuangde
2019 14TH ANNUAL IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (IEEE-NEMS 2019), 2019, : 105 - 109
[22] Temperature dependence of avalanche breakdown in 4H-SiC devices
Steinmann, Philipp
Hull, Brett
Ji, In-Hwan
Lichtenwalner, Daniel
Van Brunt, Edward
JOURNAL OF APPLIED PHYSICS, 2023, 133 (23)
[23] 4H-SiC photoconductive switching devices for use in high-power applications
Dogan, S
Teke, A
Huang, D
Morkoç, H
Roberts, CB
Parish, J
Ganguly, B
Smith, M
Myers, RE
Saddow, SE
APPLIED PHYSICS LETTERS, 2003, 82 (18) : 3107 - 3109
[24] Selective growth of 4H-SIC on 4H-SiC substrates using a high temperature mask
Li, C
Seiler, J
Bhat, I
Chow, TP
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 185 - 188
[25] Thermal oxidation temperature dependence of 4H-SiC MOS interface
Kurimoto, Hirofumi
Shibata, Kaoru
Kimura, Chiharu
Aoki, Hidemitsu
Sugino, Takashi
APPLIED SURFACE SCIENCE, 2006, 253 (05) : 2416 - 2420
[26] Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices
Zhang, Cher Xuan
Zhang, En Xia
Fleetwood, Daniel M.
Schrimpf, Ronald D.
Dhar, Sarit
Ryu, Sei-Hyung
Shen, Xiao
Pantelides, Sokrates T.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (06) : 2925 - 2929
[27] Impact of UV irradiation on thermally grown 4H-SiC MOS devices
Ikeguchi, Daisuke
Kirino, Takashi
Mitani, Shuhei
Nakano, Yuki
Nakamura, Takashi
Hosoi, Takuji
Shimura, Takayoshi
Watanabe, Heiji
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 765 - +
[28] Advances in Inversion Channel Mobility Model for 4H-SiC MOS Devices
Tian, Baohua
He, Feng
Liu, Jiang
Huang, Xingde
Jin, Rui
SILICON, 2023, 15 (18) : 7669 - 7684
[29] Advances in Inversion Channel Mobility Model for 4H-SiC MOS Devices
Baohua Tian
Feng He
Jiang Liu
Xingde Huang
Rui Jin
Silicon, 2023, 15 : 7669 - 7684
[30] Reduction of interface trap density in 4H-SiC MOS by high-temperature oxidation
Okuno, E
Amano, S
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 989 - 992

← 1 2 3 4 5 →