Investigation of the reliability of 4H-SiC MOS devices for high temperature applications

被引：37
作者：
Le-Huu, Martin [1 ]
Schmitt, Holger [2 ]
Noll, Stefan [1 ]
Grieb, Michael [1 ]
Schrey, Frederik F. [1 ]
Bauer, Anton J. [2 ]
Frey, Lothar [2 ,3 ]
Ryssel, Heiner [2 ,3 ]
机构：
[1] Robert Bosch GmbH, D-70839 Gerlingen, Germany
[2] Fraunhofer IISB, D-91058 Erlangen, Germany
[3] Univ Erlangen Nurnberg, Chair Electron Devices, D-91058 Erlangen, Germany
来源：
MICROELECTRONICS RELIABILITY | 2011年 / 51卷 / 08期
关键词：
DEPENDENT DIELECTRIC-BREAKDOWN; FOWLER-NORDHEIM CURRENT; GATE OXIDE; CAPACITORS; SIO2; N2O; INTERFACE; SIC/SIO2; LIFETIME; MOSFETS;
D O I：
10.1016/j.microrel.2011.03.015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the excellent reliability of 4H-SiC MOS devices during high temperature operation is demonstrated for a gate oxide processed in N(2)O. A temperature dependent Fowler-Nordheim analysis is used to show that statistical energy spreading accounts for only part of the reported temperature induced barrier height degradation. Poole-Frenkel current caused by acceptor like traps in the oxide due to carbon interstitials is proposed to be responsible for the additional current observed. Temperature and electric field acceleration of the time to dielectric breakdown is investigated at elevated temperatures in order to predict the expected MOS lifetime during high temperature operation. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1346 / 1350
页数：5
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