Arc-Melting to Narrow the Bandgap of Oxide Semiconductors

被引：58

作者：

Ou, Gang ^{[1
]}

Li, Dongke ^{[1
]}

Pan, Wei ^{[1
]}

Zhang, Qinghua ^{[1
]}

Xu, Ben ^{[1
]}

Gu, Lin ^{[2
,3
]}

Nan, Cewen ^{[1
]}

Wu, Hui ^{[1
]}

机构：

[1] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Sch Mat Sci & Engn, Beijing 100084, Peoples R China

[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China

来源：

ADVANCED MATERIALS | 2015年 / 27卷 / 16期

关键词：

bandgap engineering; defect chemistry; inorganic semiconductors; photocatalysts; ZNO; PHOTOCATALYSIS; REDUCTION; EVOLUTION; GROWTH; ZINC;

D O I：

10.1002/adma.201405763

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

[No abstract available]

引用

页码：2589 / 2594

页数：6

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