C-V and DLTS studies of radiation induced Si-SiO2 interface defects

被引：8

作者：

Capan, I. ^{[1
]}

Janicki, V. ^{[1
]}

Jacimovic, R. ^{[2
]}

Pivac, B. ^{[1
]}

机构：

[1] Rudjer Boskovic Inst, Zagreb 10000, Croatia

[2] Jozef Stefan Inst, Ljubljana 1000, Slovenia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2012年 / 282卷

关键词：

Interface; Radiation; Defects; C-V; DLTS;

D O I：

10.1016/j.nimb.2011.08.065

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Interface traps at the Si-SiO2 interface have been and will be an important performance limit in many (future) semiconductor devices. In this paper, we present a study of fast neutron radiation induced changes in the density of Si-SiO2 interface-related defects. Interface related defects (P-b centers) are detected before and upon the irradiation. The density of interface-related defects is increasing with the fast neutron fluence. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：59 / 62

页数：4

共 17 条

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