Raman characterization of GaAs/InGaP heterostructure bipolar transistor

被引:0
作者
Amtout, A [1 ]
Ferguson, I [1 ]
Lee, DS [1 ]
Sun, SZ [1 ]
Armour, EA [1 ]
Cooke, P [1 ]
Stall, RA [1 ]
机构
[1] EMCORE Corp, Somerset, NJ 08873 USA
来源
2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 2000年
关键词
D O I
10.1109/ISCS.2000.947123
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Micro-Raman spectroscopy has been used to study GaAS/InGaP Heterostructure Bipolar Transistor (IBT) structure that has been fabricated into an operational device. Carrier concentration measurements from the exposed Tellurium-doped InxGa1-xAs contact emitter and silicon doped GaAs sub-collector were estimated from the position of the high frequency coupled Plasmon-Longitudinal optical Phonon (PLP) mode. The frequency of the coupled PLP mode in In0.6Ga0.4As emitter contact layer was measured as 1811 cm(-1) with a corresponding carrier concentration of n=1.3x10(19) cm(-1). The GaAs sub-collector carrier concentration was estimated to be n=4.5x10(18) cm(-3). These carrier concentrations were in good agreement with that measured using other techniques and that expected from the growth conditions. The Raman technique was not sensitive to the hole concentration of the carbon doped GaAs base. While micro-Raman technique can be used studying the doping levels of fabricated HBT devices the inability to probe the carbon-doped base limits the usefulness of this technique for these devices.
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页码:25 / 30
页数:6
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