Growth of Na doped p-type non-polar a-plane ZnO films by pulsed laser deposition

被引：13
|
作者：
Li, Yang [1 ]
Zhang, Yinzhu [1 ]
He, Haiping [1 ]
Ye, Zhizhen [1 ]
Jiang, Jie [1 ]
Cao, Lin [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
来源：
MATERIALS LETTERS | 2012年 / 76卷
关键词：
Non-polar ZnO; P-type; Semiconductors; Electrical properties; CHEMICAL-VAPOR-DEPOSITION; LIGHT-EMITTING-DIODES; THIN-FILM; TEMPERATURE; EPITAXY;
D O I：
10.1016/j.matlet.2012.02.039
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Non-polar ZnO:Na films were deposited on r-plane sapphire substrates with different Na doping concentration by pulsed laser deposition. Based on the X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis, the ZnO:Na films with Na concentration from 1% to 2% exhibit unique non-polar < 11-20 > orientation and those films deposited with Na concentration above 2% present < 0001 > and < 11-20 > mixed orientations. Anisotropic stripes-like morphology can be observed for the Na content below 2%. A stable p-type non-polar ZnO:Na film was obtained by doping 2% Na, and X-ray photoelectron spectroscopy (XPS) exhibited the presentation of Na-zn acceptor, which was the origin of p-type behavior. (C) 2012 Elsevier B.V, All rights reserved.
引用
收藏
页码：81 / 83
页数：3
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