Comparison of AZO, GZO, and AGZO Thin Films TCOs Applied for a-Si Solar Cells

被引：53

作者：

Lin, Y. C. ^{[1
]}

Chen, T. Y. ^{[1
]}

Wang, L. C. ^{[1
]}

Lien, S. Y. ^{[2
]}

机构：

[1] Natl Changhua Univ Educ, Dept Mechatron Engn, Changhua 50007, Taiwan

[2] MingDao Univ, Dept Mat Sci & Engn, Chunghua 52345, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2012年 / 159卷 / 06期

关键词：

ZINC-OXIDE; OPTICAL-PROPERTIES; ELECTRODES; PERFORMANCE; LAYERS;

D O I：

10.1149/2.108206jes

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This study prepared aluminum and gallium co-doped zinc oxide (AGZO) thin films using pulsed direct current magnetron sputtering, and studied the electrical properties, transmittance, effects of texturing, and applicability as the front contact for a-Si:H solar cells. Textured ZnO:Al (AZO) and ZnO:Ga (GZO) thin films were also compared with AGZO thin film to evaluate their performance as front contacts. Experimental results show that AGZO films with the highest figure of merit phi TC value (24.64 x 10(-3) Omega(-1)) were obtained at Al and Ga doping concentrations of 0.54 wt% and 1.165 wt%, respectively. The textured AGZO films used as the front contact in a-Si:H solar cells achieved the following results: V-OC = 0.77 V, JSC = 16.5 mA/cm(2), FF = 59%, and conversion efficiency of 7.53%. AZO and GZO films have better electrical properties than AGZO film; however, AGZO film has superior transmittance in the near-infrared (NIR) region and higher JSC, conversion efficiency and external quantum efficiency (EQE) than AZO and GZO films under a similar haze value. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.108206jes] All rights reserved.

引用

页码：H599 / H604

页数：6

共 28 条

[21] Transparent conducting oxide layers for thin film silicon solar cells [J].

Rath, J. K. ;

Liu, Y. ;

de Jong, M. M. ;

de Wild, J. ;

Schuttauf, J. A. ;

Brinza, M. ;

Schropp, R. E. I. .

THIN SOLID FILMS, 2010, 518 (24) :E129-E135

[22] Challenges in microcrystalline silicon based solar cell technology [J].

Rech, B. ;

Repmann, T. ;

van den Donker, M. N. ;

Berginski, M. ;

Kilper, T. ;

Huepkes, J. ;

Calnan, S. ;

Stiebig, H. ;

Wieder, S. .

THIN SOLID FILMS, 2006, 511 :548-555

[23] A new light trapping TCO for nc-Si:H solar cells [J].

Selvan, J. A. Anna ;

Delahoy, Alan E. ;

Guo, Sheyu ;

Li, Yuan-Min .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (18-19) :3371-3376

[24] Interfaces in a-Si:H solar cell structures [J].

Stiebig, H ;

Siebke, F ;

Beyer, W ;

Beneking, C ;

Rech, B ;

Wagner, H .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 48 (1-4) :351-363

[25] Performance of spray-deposited ZnO:In layers as front electrodes in thin-film silicon solar cells [J].

Wienke, J. ;

van der Zanden, B. ;

Tijssen, M. ;

Zeman, M. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2008, 92 (08) :884-890

[26] Effect of substrate temperature on the structural, electrical and optical properties of ZnO:Ga thin films prepared by RF magnetron sputtering [J].

Wu, F. ;

Fang, L. ;

Pan, Y. J. ;

Zhou, K. ;

Huang, Q. L. ;

Kong, C. Y. .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 43 (01) :228-234

[27] Surface textured ZnO:Al thin films by pulsed DC magnetron sputtering for thin film solar cells applications [J].

Yen, W. T. ;

Lin, Y. C. ;

Ke, J. H. .

APPLIED SURFACE SCIENCE, 2010, 257 (03) :960-968

[28] Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetron sputtering [J].

Yen, W. T. ;

Lin, Y. C. ;

Yao, P. C. ;

Ke, J. H. ;

Chen, Y. L. .

THIN SOLID FILMS, 2010, 518 (14) :3882-3885

← 1 2 3 →