Atomic Layer Etching: An Industry Perspective

被引：144

作者：

Carver, Colin T. ^{[1
]}

Plombon, John J. ^{[1
]}

Romero, Patricio E. ^{[1
]}

Suri, Satyarth ^{[1
]}

Tronic, Tristan A. ^{[1
]}

Turkot, Robert B., Jr. ^{[1
]}

机构：

[1] Intel Corp, Components Res, Hillsboro, OR 97124 USA

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2015年 / 4卷 / 06期

关键词：

ULTRACLEAN ECR PLASMA; NE NEUTRAL BEAM; LOW-ANGLE; GAAS; INP; SI; SCATTERING; CHLORINE; SILICON; INGAAS;

D O I：

10.1149/2.0021506jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper provides an industry perspective on atomic layer etching (ALEt) process. Two process sequences representing two different methods of ALEt are described, followed by several examples where ALEt can be an enabling process technology in the semiconductor industry. The authors believe that there needs to be an increased understanding of surface functionalization, modification and chemistry-based material removal. We are confident that this review article will allow for increased scientific and technological solutions for enabling ALEt. (C) The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. All rights reserved.

引用

页码：N5005 / N5009

页数：5

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