Al2O3 Growth on (100) In0.53Ga0.47As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures

被引：44

作者：

Carter, Andrew D. ^{[1
]}

Mitchell, William J. ^{[1
]}

Thibeault, Brian J. ^{[1
]}

Law, Jeremy J. M. ^{[1
]}

Rodwell, Mark J. W. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 09期

关键词：

TRANSISTOR;

D O I：

10.1143/APEX.4.091102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of hydrogen plasma treatment before atomic layer deposition of aluminum oxide on In0.53Ga0.47As is investigated. Experiments on untreated, trimethylaluminum-treated, hydrogen-plasma treated, and iterative hydrogen plasma/trimethylaluminum-treated samples are compared in the context of interface trap density, D-it. Through the conductance method, it was found that five cycles of two s, 20 mT, 100 W hydrogen plasma alternating with 40 msS of trimethylaluminum dose prior to dielectric growth resulted in a reduction of interface trap density (0.2 eV below the conduction band edge) from 4.6 x 10(12) eV(-1) cm(-2) for untreated samples to 1.7 x 10(12) eV(-1) cm(-2) for treated samples. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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