Effects of Co addition on magneto-transport properties of magnetic tunnel junction consisting of CoFeB or CoFeSiB free layer

被引：4
作者：
Noh, Su Jung [1 ]
Chun, Byong Sun [1 ]
Kim, Young Keun [1 ]
Wang, Tianxing [2 ]
机构：
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
[2] Henan Normal Univ, Coll Phys & Informat Engn, Xinxiang, Henan, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 07期
关键词：
ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I：
10.1063/1.3565404
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Amorphous ferromagnetic CoFeB and CoFeSiB layers with various Co concentrations were employed as free layers of magnetic tunnel junctions (MTJs), and their magnetization switching performances were compared. Both analytical measurements and micromagnetic modeling efforts were carried out to understand the dependence of magnetization switching field (H-sw) on Co concentration. In overall, the CoFeSiB free layered MTJs showed a lower H-sw compared to that of the CoFeB ones. This is due to the fact that CoFeSiB possesses a lower saturation magnetization than CoFeB and, moreover, its magnetization switching process shows coherent switching. (C) 2011 American Institute of Physics. [doi:10.1063/1.3565404]
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页数：3
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