The Effect of Dynamic Bias Stress on the Photon-Enhanced Threshold Voltage Instability of Amorphous HfInZnO Thin-Film Transistors

被引：15

作者：

Son, Kyoung-Seok ^{[1
]}

Kim, Hyun-Suk ^{[1
]}

Maeng, Wan-Joo ^{[1
]}

Jung, Ji-Sim ^{[1
]}

Lee, Kwang-Hee ^{[1
]}

Kim, Tae-Sang ^{[1
]}

Park, Joon Seok ^{[1
]}

Kwon, Jang-Yeon ^{[1
]}

Koo, Bonwon ^{[1
]}

Lee, Sang-Yoon ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Display Lab, Yongin 446712, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 02期

关键词：

Dynamic stress; HfInZnO; instability; thin-film transistor (TFT);

D O I：

10.1109/LED.2010.2093867

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical stability of amorphous HfInZnO (HIZO) thin-film transistors (TFTs) was investigated under static and dynamic stress conditions, with simultaneous visible light radiation. The extent of device degradation is found to be strongly sensitive to the gate voltage, pulse duty ratio, pulse frequency, and exposure to visible light. Dynamic stress experiments demonstrate that highly stable devices can be realized by adjusting the pulse duty ratio and frequency, which suggests that amorphous HIZO TFTs are a promising candidate of switching devices for large-area high-resolution AMLCD applications.

引用

页码：164 / 166

页数：3

共 17 条

[1] Electrical instability of hydrogenated amorphous silicon thin-film transistors for active-matrix liquid-crystal displays [J].

Chiang, CS ;

Kanicki, J ;

Takechi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (9A) :4704-4710

[2] Correlation between bias stress instability and phototransistor operation of pentacene thin-film transistors [J].

Debucquoy, Maarten ;

Verlaak, Stijn ;

Steudel, Soeren ;

Myny, Kris ;

Genoe, Jan ;

Heremans, Paul .

APPLIED PHYSICS LETTERS, 2007, 91 (10)

[3] Fully transparent ZnO thin-film transistor produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Pereira, LMN ;

Martins, RFP .

ADVANCED MATERIALS, 2005, 17 (05) :590-+

[4]

Ghaffarzadeh K., 2010, APPL PHYS LETT, V97

[5] The influence of visible light on transparent zinc tin oxide thin film transistors [J].

Goerrn, P. ;

Lehnhardt, M. ;

Riedl, T. ;

Kowalsky, W. .

APPLIED PHYSICS LETTERS, 2007, 91 (19)

[6] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[7] High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel [J].

Jeong, Jae Kyeong ;

Jeong, Jong Han ;

Yang, Hui Won ;

Park, Jin-Seong ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2007, 91 (11)

[8] Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors [J].

Kim, Chang-Jung ;

Kim, Sangwook ;

Lee, Je-Hun ;

Park, Jin-Seong ;

Kim, Sunil ;

Park, Jaechul ;

Lee, Eunha ;

Lee, Jaechul ;

Park, Youngsoo ;

Kim, Joo Han ;

Shin, Sung Tae ;

Chung, U-In .

APPLIED PHYSICS LETTERS, 2009, 95 (25)

[9] Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display [J].

Kwon, Jang Yeon ;

Son, Kyoung Seok ;

Jung, Ji Sim ;

Kim, Tae Sang ;

Ryu, Myung Kwan ;

Park, Kyung Bae ;

Yoo, Byung Wook ;

Kim, Jung Woo ;

Lee, Young Gu ;

Park, Kee Chan ;

Lee, Sang Yoon ;

Kim, Jong Min .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (12) :1309-1311

[10] Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors [J].

Lee, Jeong-Min ;

Cho, In-Tak ;

Lee, Jong-Ho ;

Kwon, Hyuck-In .

APPLIED PHYSICS LETTERS, 2008, 93 (09)

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