The mechanism of interlayer exchange coupling in silicon/iron layered structures

被引:1
作者
Tugushev, V [1 ]
Kulatov, E
Navarro, O
机构
[1] RRC Kurchatov Inst, Moscow 123182, Russia
[2] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia
[3] Natl Autonomous Univ Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico
关键词
intertayer exchange coupling; a-Si/Fe structures; indirect tunneling;
D O I
10.1016/j.mejo.2005.02.061
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose a new mechanism of interlayer exchange coupling in a-Si/Fe structures, based on the indirect tunneling of spin-polarized electrons across the semiconductors spacer. This tunneling is effectuated by virtual hopping process over a narrow band, laying close to the Fermi level and leading to the sharp peak in the density of electron states. We take into account the iron-silicide formation inside the spacer and estimate the parameters of an effective exchange. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:488 / 490
页数:3
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