Metalorganic chemical vapor deposition of InGaN layers on ZnO substrates

被引：20
作者：
Wang, Shen-Jie
Li, Nola
Park, Eun-Hyun
Lien, Siou-Cheng
Feng, Zhe Chuan [1 ]
Valencia, Adriana
Nause, Jeff
Ferguson, Ian
机构：
[1] Natl Taiwan Univ, Inst Photon & Optoelect, Dept Elect Engn, Taipei 10617, Taiwan
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[3] CERMET Inc, Atlanta, GA 30318 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 10期
关键词：
D O I：
10.1063/1.2817482
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InGaN layers have been grown on (0001) ZnO substrates by metalorganic chemical vapor deposition utilizing a low temperature grown thin GaN buffer. Good quality InGaN films with a wide range of In composition were confirmed by high-resolution x-ray diffraction. Even at high indium concentrations no In droplets and phase separation appeared, possibly due to coherent growth of InGaN on ZnO. Photoluminescence showed broad InGaN-related emissions with peak energy lower than the calculated InGaN band gap, possibly due to Zn/O impurities diffused into InGaN from the ZnO substrate. An activation energy of 59 meV for the InGaN epilayer is determined. (C) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition
    Reilly, Caroline E.
    Bonef, Bastien
    Nakamura, Shuji
    Speck, James S.
    DenBaars, Steven P.
    Keller, Stacia
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (12)
  • [22] Detection and analysis of phase separation in metalorganic chemical vapor deposition InGaN
    Piner, EL
    El-Masry, NA
    Liu, SX
    Bedair, SM
    NITRIDE SEMICONDUCTORS, 1998, 482 : 125 - 130
  • [23] GaN homoepitaxial layers grown by metalorganic chemical vapor deposition
    Leszczynski, M
    Beaumont, B
    Frayssinet, E
    Knap, W
    Prystawko, P
    Suski, T
    Grzegory, I
    Porowski, S
    APPLIED PHYSICS LETTERS, 1999, 75 (09) : 1276 - 1278
  • [24] ZnO nanowalls and nanocolumns grown by metalorganic chemical vapor deposition
    Kim, Sang-Woo
    Fujita, Shizuo
    Yi, Min-Su
    Kim, Han-Ki
    Yang, Beelyong
    Yoon, Dae Ho
    ADVANCES IN NANOMATERIALS AND PROCESSING, PTS 1 AND 2, 2007, 124-126 : 77 - +
  • [25] Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition
    Liu, Jianping
    Ryou, Jae-Hyun
    Lochner, Zachary
    Limb, Jae
    Yoo, Dongwon
    Dupuis, Russell D.
    Wu, Zhihao
    Fischer, Alec M.
    Ponce, Fernando A.
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) : 5166 - 5169
  • [26] Metalorganic chemical vapor deposition of PbTe films on GaAs substrates
    1600, (71):
  • [27] Metalorganic chemical vapor deposition of ZnO:N using NO as dopant
    Dangbegnon, J. K.
    Talla, K.
    Roro, K. T.
    Botha, J. R.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (22) : 4419 - 4421
  • [28] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ORIENTED ZNO FILMS
    KAUFMANN, T
    FUCHS, G
    WEBERT, M
    CRYSTAL RESEARCH AND TECHNOLOGY, 1988, 23 (05) : 635 - 639
  • [29] Structural investigation of metalorganic chemical-vapor-deposition-grown InGaAs layers on misoriented GaAs substrates
    Takano, Y
    Masuda, M
    Shirakawa, Y
    Kuwahara, K
    Fuke, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (9AB): : L901 - L904
  • [30] High-Quality AlN Layers Grown on Si(111) Substrates by Metalorganic Chemical Vapor Deposition
    I. S. Ezubchenko
    M. Ya. Chernykh
    I. O. Mayboroda
    I. N. Trun’kin
    I. A. Chernykh
    M. L. Zanaveskin
    Crystallography Reports, 2020, 65 : 122 - 125
12345