Metalorganic chemical vapor deposition of InGaN layers on ZnO substrates

被引：20
|
作者：
Wang, Shen-Jie
Li, Nola
Park, Eun-Hyun
Lien, Siou-Cheng
Feng, Zhe Chuan [1 ]
Valencia, Adriana
Nause, Jeff
Ferguson, Ian
机构：
[1] Natl Taiwan Univ, Inst Photon & Optoelect, Dept Elect Engn, Taipei 10617, Taiwan
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[3] CERMET Inc, Atlanta, GA 30318 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 10期
关键词：
D O I：
10.1063/1.2817482
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InGaN layers have been grown on (0001) ZnO substrates by metalorganic chemical vapor deposition utilizing a low temperature grown thin GaN buffer. Good quality InGaN films with a wide range of In composition were confirmed by high-resolution x-ray diffraction. Even at high indium concentrations no In droplets and phase separation appeared, possibly due to coherent growth of InGaN on ZnO. Photoluminescence showed broad InGaN-related emissions with peak energy lower than the calculated InGaN band gap, possibly due to Zn/O impurities diffused into InGaN from the ZnO substrate. An activation energy of 59 meV for the InGaN epilayer is determined. (C) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Selective formation of ZnO nanodots on nanopatterned substrates by metalorganic chemical vapor deposition
    Kim, SW
    Kotani, T
    Ueda, M
    Fujita, S
    Fujita, S
    APPLIED PHYSICS LETTERS, 2003, 83 (17) : 3593 - 3595
  • [2] Selective growth of ZnO nanoneedles on Si substrates by metalorganic chemical vapor deposition
    Tak, Y
    Yong, KJ
    Park, C
    JOURNAL OF CRYSTAL GROWTH, 2005, 285 (04) : 549 - 554
  • [3] Compositional inhomogeneity of InGaN grown on sapphire and bulk GaN substrates by metalorganic chemical vapor deposition
    Sato, H
    Sugahara, T
    Naoi, Y
    Sakai, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (4A): : 2013 - 2015
  • [4] High-quality ZnO layers grown on 6H-SiC substrates by metalorganic chemical vapor deposition
    Ashrafi, ABMA
    Zhang, BP
    Binh, NT
    Wakatsuki, K
    Segawa, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (03): : 1114 - 1117
  • [5] Phase separation in InGaN grown by metalorganic chemical vapor deposition
    El-Masry, NA
    Piner, EL
    Liu, SX
    Bedair, SM
    APPLIED PHYSICS LETTERS, 1998, 72 (01) : 40 - 42
  • [6] InP grown on Si substrates with GaP buffer layers by metalorganic chemical vapor deposition
    Kohama, Yoshitaka, 1600, (28):
  • [7] Metalorganic chemical vapor deposition of ZnO films on Si (111) substrates using 3C-SiC buffer layers
    Zhu, Junjie
    Lee, In-Hwau
    Yao, Ran
    Fu, Zhuxi
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 50 (03) : 598 - 601
  • [8] Metalorganic chemical vapor deposition and characterization of ZnO materials
    Sun, SZ
    Tompa, GS
    Hoerman, B
    Look, DC
    Claflin, BB
    Rice, CE
    Masaun, P
    JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (04) : 766 - 770
  • [9] Metalorganic chemical vapor deposition and characterization of ZnO materials
    Shangzu Sun
    Gary S. Tompa
    Brent Hoerman
    David C. Look
    Bruce B. Claflin
    Catherine E. Rice
    Puneet Masaun
    Journal of Electronic Materials, 2006, 35 : 766 - 770
  • [10] Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition
    Kadys, A.
    Malinauskas, T.
    Grinys, T.
    Dmukauskas, M.
    Mickevicius, J.
    Aleknavicius, J.
    Tomasiunas, R.
    Selskis, A.
    Kondrotas, R.
    Stanionyte, S.
    Lugauer, H.
    Strassburg, M.
    JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (01) : 188 - 193
12345