Planar gallium nitride ultraviolet optical modulator

被引：18

作者：

Oberhofer, AE ^{[1
]}

Muth, JF

Johnson, MAL

Chen, ZY

Fleet, EF

Cooper, GD

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[3] Pixelligent Technol LLC, Alexandria, VA 22311 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 14期

关键词：

ELECTROABSORPTION; HETEROSTRUCTURES; ALGAN/GAN; EDGE;

D O I：

10.1063/1.1615675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A planar optical modulator operating near 360 nm suitable for ultraviolet spatial light modulation has been constructed. The modulator operates in transmission mode with a 18% change in transmission at 305 V. The modulator is based on using the electric field to shift and broaden the room-temperature resonance of the gallium nitride exciton with electric fields. (C) 2003 American Institute of Physics.

引用

页码：2748 / 2750

页数：3

共 12 条

[1]

[Anonymous], 2000, BLUE LASER DIODE COM

[2] Electric field effects on excitons in gallium nitride [J].

Binet, F ;

Duboz, JY ;

Rosencher, E ;

Scholz, F ;

Harle, V .

PHYSICAL REVIEW B, 1996, 54 (11) :8116-8121

[3] Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001) [J].

Cook, TE ;

Fulton, CC ;

Mecouch, WJ ;

Tracy, KM ;

Davis, RF ;

Hurt, EH ;

Lucovsky, G ;

Nemanich, RJ .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) :3995-4004

[4] ELECTROABSORPTION IN SEMICONDUCTORS - EXCITONIC ABSORPTION EDGE [J].

DOW, JD ;

REDFIELD, D .

PHYSICAL REVIEW B, 1970, 1 (08) :3358-&

[5] Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μm wavelength in GaN/AlGaN heterostructures [J].

Heber, JD ;

Gmachl, C ;

Ng, HM ;

Cho, AY .

APPLIED PHYSICS LETTERS, 2002, 81 (07) :1237-1239

[6] Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures [J].

Heikman, S ;

Keller, S ;

Wu, Y ;

Speck, JS ;

DenBaars, SP ;

Mishra, UK .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (12) :10114-10118

[7] NORMALLY-OFF HIGH-CONTRAST ASYMMETRIC FABRY-PEROT REFLECTION MODULATOR USING WANNIER-STARK LOCALIZATION IN A SUPERLATTICE [J].

LAW, KK ;

YAN, RH ;

MERZ, JL ;

COLDREN, LA .

APPLIED PHYSICS LETTERS, 1990, 56 (19) :1886-1888

[8] BAND-EDGE ELECTROABSORPTION IN QUANTUM WELL STRUCTURES - THE QUANTUM-CONFINED STARK-EFFECT [J].

MILLER, DAB ;

CHEMLA, DS ;

DAMEN, TC ;

GOSSARD, AC ;

WIEGMANN, W ;

WOOD, TH ;

BURRUS, CA .

PHYSICAL REVIEW LETTERS, 1984, 53 (22) :2173-2176

[9] Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements [J].

Muth, JF ;

Lee, JH ;

Shmagin, IK ;

Kolbas, RM ;

Casey, HC ;

Keller, BP ;

Mishra, UK ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1997, 71 (18) :2572-2574

[10] NORMAL INCIDENCE HIGH-CONTRAST MULTIPLE-QUANTUM-WELL LIGHT-MODULATOR BASED ON POLARIZATION ROTATION [J].

SHEN, H ;

WRABACK, M ;

PAMULAPATI, J ;

DUTTA, M ;

NEWMAN, PG ;

BALLATO, A ;

LU, Y .

APPLIED PHYSICS LETTERS, 1993, 62 (23) :2908-2910

← 1 2 →