Defects control in sub-quarter micron devices

The key factors to fabricate sub-quarter micron devices are accurate control of dopant profiles and junction leakage current reduction The enhanced diffusion is strongly related with point defects such as interstitial Si and vacancy and the leakage current is related with residual defects, point defects and micro defects, which are not observed by TEM. Defects behavior clarification and control is important in low temperature process. In this paper,recent results on defect investigation and their control for ion implantation and plasma etching process are discussed. The influence of point defects is evaluated by positron annihilation, broadening of delta doped layer, Cu decoration and DLTS methods and device characteristics related with point defects is also discussed and then the method to minimize the influence is proposed.