Centimeter-Scale 2D van der Waals Vertical Heterostructures Integrated on Deformable Substrates Enabled by Gold Sacrificial Layer-Assisted Growth

被引:32
作者
Islam, Md Ashraful [1 ,2 ]
Kim, Jung Han [5 ]
Schropp, Anthony [1 ]
Kalita, Hirokjyoti [1 ,2 ]
Choudhary, Nitin [1 ]
Weitzman, Dylan [1 ]
Khondaker, Saiful I. [1 ,2 ,3 ]
Oh, Kyu Hwan [5 ]
Roy, Tania [1 ,2 ,3 ,4 ]
Chung, Hee-Suk [6 ]
Jung, Yeonwoong [1 ,2 ,4 ]
机构
[1] Univ Cent Florida, NanoSci Technol Ctr, Orlando, FL 32826 USA
[2] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32826 USA
[3] Univ Cent Florida, Dept Phys, Orlando, FL 32826 USA
[4] Univ Cent Florida, Dept Mat Sci & Engn, Orlando, FL 32826 USA
[5] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
[6] Korea Basic Sci Inst, Analyt Res Div, Jeonju 54907, South Korea
基金
新加坡国家研究基金会;
关键词
2D materials; TMD; MoS2/WS2; van der Waals heterostructure; layer transfer; flexible device; MOS2; FILMS; 2-DIMENSIONAL MOS2; RAMAN-SCATTERING; ALIGNED LAYERS; MONO LAYER; TRANSITION; HETEROJUNCTION; MONOLAYERS; UNIVERSAL; PHOTOLUMINESCENCE;
D O I
10.1021/acs.nanolett.7b02776
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum or tungsten disulfides (MoS2 or WS2) exhibit extremely large in-plane strain limits and unusual optical/electrical properties, offering unprecedented opportunities for flexible electronics/optoelectronics in new form factors. In order for them to be technologically viable building-blocks for such emerging technologies, it is critically demanded to grow/integrate them onto flexible or arbitrary shaped substrates on a large wafer-scale compatible with the prevailing microelectronics processes. However, conventional approaches to assemble them on such unconventional substrates via mechanical exfoliations or coevaporation chemical growths have been limited to small-area transfers of 2D TMD layers with uncontrolled spatial homogeneity. Moreover, additional processes involving a prolonged exposure to strong chemical etchants have been required for the separation of as-grown 2D layers, which is detrimental to their material properties. Herein, we report a viable strategy to universally combine the centimeter-scale growth of various 2D TMD layers and their direct assemblies on mechanically deformable substrates. By exploring the water-assisted debonding of gold (Au) interfaced with silicon dioxide (SiO2), we demonstrate the direct growth, transfer, and integration of 2D TMD layers and heterostructures such as 2D MoS2 and 2D MoS2/WS2 vertical stacks on centimeter-scale plastic and metal foil substrates. We identify the dual function of the Au layer as a growth substrate as well as a sacrificial layer which facilitates 2D layer transfer. Furthermore, we demonstrate the versatility of this integration approach by fabricating centimeter-scale 2D MoS2/single walled carbon nanotube (SWNT) vertical heterojunctions which exhibit current rectification and photoresponse. This study opens a pathway to explore large-scale 2D TMD van der Waals layers as device building blocks for emerging mechanically deformable electronics/optoelectronics.
引用
收藏
页码:6157 / 6165
页数:9
相关论文
共 57 条
  • [1] Ajayan P, 2016, PHYS TODAY, V69, P39
  • [2] Two-dimensional flexible nanoelectronics
    Akinwande, Deji
    Petrone, Nicholas
    Hone, James
    [J]. NATURE COMMUNICATIONS, 2014, 5
  • [3] Recent Advances in Two-Dimensional Materials beyond Graphene
    Bhimanapati, Ganesh R.
    Lin, Zhong
    Meunier, Vincent
    Jung, Yeonwoong
    Cha, Judy
    Das, Saptarshi
    Xiao, Di
    Son, Youngwoo
    Strano, Michael S.
    Cooper, Valentino R.
    Liang, Liangbo
    Louie, Steven G.
    Ringe, Emilie
    Zhou, Wu
    Kim, Steve S.
    Naik, Rajesh R.
    Sumpter, Bobby G.
    Terrones, Humberto
    Xia, Fengnian
    Wang, Yeliang
    Zhu, Jun
    Akinwande, Deji
    Alem, Nasim
    Schuller, Jon A.
    Schaak, Raymond E.
    Terrones, Mauricio
    Robinson, Joshua A.
    [J]. ACS NANO, 2015, 9 (12) : 11509 - 11539
  • [4] Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures
    Bradley, Aaron J.
    Ugeda, Miguel M.
    da Jornada, Felipe H.
    Qiu, Diana Y.
    Ruan, Wei
    Zhang, Yi
    Wickenburg, Sebastian
    Riss, Alexander
    Lu, Jiong
    Mo, Sung-Kwan
    Hussain, Zahid
    Shen, Zhi-Xun
    Louie, Steven G.
    Crommie, Michael F.
    [J]. NANO LETTERS, 2015, 15 (04) : 2594 - 2599
  • [5] Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
    Castellanos-Gomez, Andres
    Buscema, Michele
    Molenaar, Rianda
    Singh, Vibhor
    Janssen, Laurens
    van der Zant, Herre S. J.
    Steele, Gary A.
    [J]. 2D MATERIALS, 2014, 1 (01):
  • [6] Ultrafast Charge Separation and Indirect Exciton Formation in a MoS2-MoSe2 van der Waals Heterostructure
    Ceballos, Frank
    Bellus, Matthew Z.
    Chiu, Hsin-Ying
    Zhao, Hui
    [J]. ACS NANO, 2014, 8 (12) : 12717 - 12724
  • [7] Low-Temperature, Dry Transfer-Printing of a Patterned Graphene Monolayer
    Cha, Sugkyun
    Cha, Minjeong
    Lee, Seojun
    Kang, Jin Hyoun
    Kim, Changsoon
    [J]. SCIENTIFIC REPORTS, 2015, 5
  • [8] Epitaxial Stitching and Stacking Growth of Atomically Thin Transition-Metal Dichalcogenides (TMDCs) Heterojunctions
    Chen, Kun
    Wan, Xi
    Xu, Jianbin
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2017, 27 (19)
  • [9] Tunable Band Gap Photoluminescence from Atomically Thin Transition-Metal Dichalcogenide Alloys
    Chen, Yanfeng
    Xi, Jinyang
    Dumcenco, Dumitru O.
    Liu, Zheng
    Suenaga, Kazu
    Wang, Dong
    Shuai, Zhigang
    Huang, Ying-Sheng
    Xie, Liming
    [J]. ACS NANO, 2013, 7 (05) : 4610 - 4616
  • [10] Determination of band alignment in the single-layer MoS2/WSe2 heterojunction
    Chiu, Ming-Hui
    Zhang, Chendong
    Shiu, Hung-Wei
    Chuu, Chih-Piao
    Chen, Chang-Hsiao
    Chang, Chih-Yuan S.
    Chen, Chia-Hao
    Chou, Mei-Yin
    Shih, Chih-Kang
    Li, Lain-Jong
    [J]. NATURE COMMUNICATIONS, 2015, 6