First Principles Study of Transverse Electric Fields on Carbon Nanotubes

被引:0
作者
da Silva, L. B. [1 ]
Fagan, Solange B. [2 ]
机构
[1] Univ Fed Ceara, Dept Fis, POB 6040, Fortaleza, Ceara, Brazil
[2] Ctr Univ Franciscano, CEP, Area Ciencias Exatas, BR-97010032 Santa Maria, RS, Brazil
来源
PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷
关键词
Carbon nanotubes; electric field; charge density;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the electronic charge density modifications due to the effects of the transverse uniform electric fields applied on the semiconductor and metallic single wall carbon nanotubes. The results obtained, by means of density functional calculations, show that semiconductor and metallic nanotubes have different behavior in the presence of the transverse electric field: the first present the electronic charge polarized due to the local orbital localization, while the metallic species are polarized due to charge dislocation throughout the surface.
引用
收藏
页码:341 / +
页数:2
相关论文
共 3 条
[1]   Band gap modification of single-walled carbon nanotube and boron nitride nanotube under a transverse electric field [J].
Chen, CW ;
Lee, MH ;
Clark, SJ .
NANOTECHNOLOGY, 2004, 15 (12) :1837-1843
[2]   Ab initio study of SO2 molecules interacting with pristine and transition metal covered fullerenes as a possible route for nanofilters [J].
da Silva, L. B. ;
Fagan, Solange B. ;
Mota, R. ;
Fazzio, A. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (17) :6677-6680
[3]   Single- and multi-wall carbon nanotube field-effect transistors [J].
Martel, R ;
Schmidt, T ;
Shea, HR ;
Hertel, T ;
Avouris, P .
APPLIED PHYSICS LETTERS, 1998, 73 (17) :2447-2449