Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands

被引：41
|
作者：
Schmidt, OG
Denker, U
Eberl, K
Kienzle, O
Ernst, F
Haug, RJ
机构：
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Max Planck Inst Met Res, D-70174 Stuttgart, Germany
[3] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 26期
关键词：
D O I：
10.1063/1.1332817
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The extremely closely stacked Ge nanostructures form vertical channels with energetically deep thermalization layers and high Si double barriers. Two resonances are found in the RTD current-voltage curve, which are attributed to the heavy-heavy hole (hh) and heavy-light hole (lh) transition. The lh resonance shows negative differential resistance up to 50 K. With increasing magnetic field, the lh resonance slightly shifts to higher voltages. (C) 2000 American Institute of Physics. [S0003-6951(00)01951-3].
引用
收藏
页码：4341 / 4343
页数：3
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