Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands

被引：41
|
作者：
Schmidt, OG
Denker, U
Eberl, K
Kienzle, O
Ernst, F
Haug, RJ
机构：
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Max Planck Inst Met Res, D-70174 Stuttgart, Germany
[3] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 26期
关键词：
D O I：
10.1063/1.1332817
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The extremely closely stacked Ge nanostructures form vertical channels with energetically deep thermalization layers and high Si double barriers. Two resonances are found in the RTD current-voltage curve, which are attributed to the heavy-heavy hole (hh) and heavy-light hole (lh) transition. The lh resonance shows negative differential resistance up to 50 K. With increasing magnetic field, the lh resonance slightly shifts to higher voltages. (C) 2000 American Institute of Physics. [S0003-6951(00)01951-3].
引用
收藏
页码：4341 / 4343
页数：3
相关论文
共 50 条
  • [1] Raman spectroscopy of self-assembled Ge islands on Si
    T.R. Yang
    M.M. Dvoynenko
    Z.C. Feng
    H.H. Cheng
    The European Physical Journal B - Condensed Matter and Complex Systems, 2003, 31 : 41 - 45
  • [2] Raman spectroscopy of self-assembled Ge islands on Si
    Yang, TR
    Dvoynenko, MM
    Feng, ZC
    Cheng, HH
    EUROPEAN PHYSICAL JOURNAL B, 2003, 31 (01): : 41 - 45
  • [3] Electroabsorption spectroscopy of Ge/Si self-assembled islands
    El kurdi, M
    Boucaud, P
    Sauvage, S
    Aniel, F
    Fishman, G
    Kermarrec, O
    Campidelli, Y
    Bensahel, D
    Saint-Girons, G
    Sagnes, I
    Patriarche, G
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (08)
  • [4] Evolution of self-assembled Ge/Si(211) islands
    Floyd, M
    Zhang, YT
    Drucker, J
    Smith, DJ
    Tari, S
    Sivananthan, S
    APPLIED PHYSICS LETTERS, 2001, 79 (27) : 4518 - 4520
  • [5] Ge/Si self-assembled islands for photonics applications
    Boucaud, Philippe
    El Kurdi, Moustafa
    Li, Xiang
    Sauvage, Sebastien
    Checoury, Xavier
    David, Sylvain
    Yam, Navy
    Fossard, Frederic
    Bouchier, Daniel
    Fishman, Guy
    GROUP IV SEMICONDUCTOR NANOSTRUCTURES-2006, 2007, 958 : 69 - +
  • [6] Formation Mechanism of Self-Assembled Ge/Si/Ge Composite Islands
    Lee, Sheng-Wei
    Chang, Hung-Tai
    Chang, Jeng-Kuei
    Cheng, Shao-Liang
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (11) : H1113 - H1116
  • [7] Resonant tunneling through a self-assembled Si quantum dot
    Fukuda, M
    Nakagawa, K
    Miyazaki, S
    Hirose, M
    APPLIED PHYSICS LETTERS, 1997, 70 (17) : 2291 - 2293
  • [8] Self-aligning of self-assembled Ge islands on Si(001)
    Kamins, TI
    Williams, RS
    Basile, DP
    NANOTECHNOLOGY, 1999, 10 (02) : 117 - 121
  • [9] Shape transitions of self-assembled Ge islands on Si (001)
    Rastelli, A
    Kummer, M
    von Känel, H
    SELF-ASSEMBLY PROCESSES IN MATERIALS, 2002, 707 : 161 - 166
  • [10] Lithographic positioning of self-assembled Ge islands on Si(001)
    Kamins, TI
    Williams, RS
    APPLIED PHYSICS LETTERS, 1997, 71 (09) : 1201 - 1203
12345