Volatile/Nonvolatile Dual-Functional Atom Transistor

被引：35

作者：

Hasegawa, Tsuyoshi ^{[1
,2
]}

Itoh, Yaomi ^{[1
,2
]}

Tanaka, Hirofumi ^{[3
]}

Hino, Takami ^{[1
]}

Tsuruoka, Tohru ^{[1
,2
]}

Terabe, Kazuya ^{[1
]}

Miyazaki, Hisao ^{[1
]}

Tsukagoshi, Kazuhito ^{[1
]}

Ogawa, Takuji ^{[3
]}

Yamaguchi, Shu ^{[2
,4
]}

Aono, Masakazu ^{[1
]}

机构：

[1] Natl Inst Mat Sci, WPI Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

[2] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

[3] Osaka Univ, Grad Sch Sci, Dept Chem, Osaka 5600043, Japan

[4] Univ Tokyo, Dept Mat Engn, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 01期

基金：

日本科学技术振兴机构;

关键词：

SOLID-ELECTROLYTE; LOW-POWER; SWITCHES;

D O I：

10.1143/APEX.4.015204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a conceptually new atom transistor operation by electric-field control of the nanoionic state. The new atom transistor possesses novel characteristics, such as dual functionality of selective volatile and nonvolatile operations, very small power consumption (pW), and a high ON/OFF ratio [106 (volatile operation) to 108 (nonvolatile operation)], in addition to complementary metal oxide semiconductor (CMOS) process compatibility enabling the development of future computing systems that fully utilize highly-integrated CMOS technology. Cyclic endurance of 104 times switching was achieved with the prototype. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

共 19 条

[1] Solid-electrolyte nanometer switch
Banno, Naoki
Sakamoto, Toshitsugu
Iguchi, Noriyuki
Kawaura, Hisao
Kaeriyama, Shunichi
Mizuno, Masayuki
Terabe, Kozuya
Hasegawa, Tsuyoshi
Aono, Masakazu
[J]. IEICE TRANSACTIONS ON ELECTRONICS, 2006, E89C (11) : 1492 - 1498
[2] The emergence of spin electronics in data storage
Chappert, Claude
Fert, Albert
Van Dau, Frederic Nguyen
[J]. NATURE MATERIALS, 2007, 6 (11) : 813 - 823
[3] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715
Choi, BJ
Jeong, DS
Kim, SK
Rohde, C
Choi, S
Oh, JH
Kim, HJ
Hwang, CS
Szot, K
Waser, R
Reichenberg, B
Tiedke, S
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)
[4] Fueki K., 1990, SOLID STATE IONICS, P47
[5] First-principles simulations on bulk Ta2O5 and Cu/Ta2O5/Pt heterojunction: Electronic structures and transport properties
Gu, Tingkun
Wang, Zhongchang
Tada, Tomofumi
Watanabe, Satoshi
[J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (10)
[6] FUNCTIONALLY SEPARATED, MULTIPLE-VALUED CONTENT-ADDRESSABLE MEMORY AND ITS APPLICATIONS
HANYU, T
ARAGAKI, S
HIGUCHI, T
[J]. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 1995, 142 (03): : 165 - 172
[7] Nanoionics Switching Devices: "Atomic Switches"
Hasegawa, Tsuyoshi
Terabe, Kazuya
Sakamoto, Toshitsugu
Aono, Masakazu
[J]. MRS BULLETIN, 2009, 34 (12) : 929 - 934
[8] A defect-tolerant computer architecture: Opportunities for nanotechnology
Heath, JR
Kuekes, PJ
Snider, GS
Williams, RS
[J]. SCIENCE, 1998, 280 (5370) : 1716 - 1721
[9] A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte
Kozicki, Michael N.
Gopalan, Chakravarthy
Balakrishnan, Muralikrishnan
Mitkova, Maria
[J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2006, 5 (05) : 535 - 544
[10] Effect of sulfurization conditions on structural and electrical properties of copper sulfide films
Kundu, Manisha
Hasegawa, Tsuyoshi
Terabe, Kazuya
Aono, Masakazu
[J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (07)

← 1 2 →