Volatile/Nonvolatile Dual-Functional Atom Transistor

被引：36

作者：

Hasegawa, Tsuyoshi ^{[1
,2
]}

Itoh, Yaomi ^{[1
,2
]}

Tanaka, Hirofumi ^{[3
]}

Hino, Takami ^{[1
]}

Tsuruoka, Tohru ^{[1
,2
]}

Terabe, Kazuya ^{[1
]}

Miyazaki, Hisao ^{[1
]}

Tsukagoshi, Kazuhito ^{[1
]}

Ogawa, Takuji ^{[3
]}

Yamaguchi, Shu ^{[2
,4
]}

Aono, Masakazu ^{[1
]}

机构：

[1] Natl Inst Mat Sci, WPI Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

[2] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

[3] Osaka Univ, Grad Sch Sci, Dept Chem, Osaka 5600043, Japan

[4] Univ Tokyo, Dept Mat Engn, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 01期

基金：

日本科学技术振兴机构;

关键词：

SOLID-ELECTROLYTE; LOW-POWER; SWITCHES;

D O I：

10.1143/APEX.4.015204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a conceptually new atom transistor operation by electric-field control of the nanoionic state. The new atom transistor possesses novel characteristics, such as dual functionality of selective volatile and nonvolatile operations, very small power consumption (pW), and a high ON/OFF ratio [106 (volatile operation) to 108 (nonvolatile operation)], in addition to complementary metal oxide semiconductor (CMOS) process compatibility enabling the development of future computing systems that fully utilize highly-integrated CMOS technology. Cyclic endurance of 104 times switching was achieved with the prototype. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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