An Eight-Phase CMOS Injection Locked Ring Oscillator with Low Phase Noise

被引：0

作者：

Yousef, K. ^{[1
]}

Jia, H. ^{[2
]}

Allam, A. ^{[1
]}

Anand, A. ^{[3
]}

Pokharel, R. ^{[3
]}

Kaho, T. ^{[4
]}

机构：

[1] Egypt Japan Univ Sci & Technol, Elect & Commun Engn Dept, New Borg Al Arab, Alex, Egypt

[2] Kyushu Univ, E JUST Ctr, Nishi Ku, Fukuoka 8190395, Japan

[3] Kyushu Univ, Grad Sch ISSE, Nishi Ku, Fukuoka 8190395, Japan

[4] Nippon Telegraph & Tel Corp, Network Innovat Labs, Tokyo, Japan

来源：

2014 IEEE INTERNATIONAL CONFERENCE ON ULTRA-WIDEBAND (ICUWB) | 2014年

关键词：

CMOS; phase noise; ring oscillator (RO); voltage pull-down; pulse injection (PI); spurious signals; injection locked ring oscillator (ILRO);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design of a low DC power, low phase noise single-ended ring oscillator (RO) in 0.18 mu m CMOS technology. It introduces a new RO output phase control technique. This RO uses a voltage pull-down circuit to produce different output signal phases. The proposed RO employs the pulse injection (PI) technique for phase noise and spurious signals suppression. The proposed injection locked ring oscillator (ILRO) can be used for phase shift keying (PSK) implementation. The proposed ILRO has an oscillation frequency of 4.5 GHz with a fine tuning range of 540 MHz. It consumes only a 4.25 mW of power while having a phase noise of -130.9 dBc/Hz @ 1MHz offset. Through this ILRO design, a figure of merit (FoM) of 197.68 dBc/Hz has been achieved.

引用

页码：337 / 340

页数：4

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