A 10-mW Submillimeter-Wave Solid-State Power-Amplifier Module

被引：62

作者：

Radisic, Vesna ^{[1
]}

Deal, William R. ^{[1
]}

Leong, Kevin M. K. H. ^{[1
]}

Mei, X. B. ^{[1
]}

Yoshida, Wayne ^{[1
]}

Liu, Po-Hsin ^{[1
]}

Uyeda, Jansen ^{[1
]}

Fung, Andy ^{[2
]}

Samoska, Lorene ^{[2
]}

Gaier, Todd ^{[2
]}

Lai, Richard ^{[1
]}

机构：

[1] Northrop Grumman Corp, Redondo Beach, CA 90278 USA

[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2010年 / 58卷 / 07期

关键词：

Coplanar waveguide (CPW); HEMT; millimeter wave; monolithic microwave integrated circuit (MMIC); module; power amplifier;

D O I：

10.1109/TMTT.2010.2050105

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we demonstrate a packaged sub-millimeter wave solid-state power amplifier (SSPA). The SSPA is implemented in coplanar waveguide (CPW) and uses an advanced high f(MAX) InP HEMT transistor with a sub 50-nm gate. A monolithically integrated CPW dipole-to-waveguide transition eliminates the need for wirebonding and additional substrates. On-chip compact tandem couplers are used for power combining. The amplifier demonstrates 15-dB small-signal gain at 340 GHz. Peak saturated output power of 10 mW at 338 GHz is obtained at the waveguide flange output for the SSPA module.

引用

页码：1903 / 1909

页数：7

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