High temperature simulation of 6H and 4H silicon carbide MOSFETs

被引：1

作者：

Shams, SF ^{[1
]}

Sundaram, KB ^{[1
]}

Chow, LC ^{[1
]}

机构：

[1] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32816 USA

来源：

PROCEEDINGS IEEE SOUTHEASTCON '98: ENGINEERING FOR A NEW ERA | 1998年

关键词：

D O I：

10.1109/SECON.1998.673347

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical power DMOSFET has been simulated using the device simulator ISE-TCAD. The most recent parameters for 6H and 4H SiC crystals are used for this simulation. Vertical DMOSFET with different channel lengths operating in two different temperatures has been examined.

引用

页码：271 / 274

页数：4