A Barrier Structure for Photoelectrode of Dye-Sensitized Solar Cell for Enhancing Efficiency

被引：7

作者：

Chou, Jung-Chuan ^{[1
]}

Kuo, Chien-Hung ^{[1
]}

Liao, Yi-Hung ^{[2
]}

Lai, Chih-Hsien ^{[1
]}

You, Pei-Hong ^{[1
]}

Ko, Cheng-Chu ^{[1
]}

Yang, Zhong-Ming ^{[3
]}

Wu, Chang-Yi ^{[3
]}

机构：

[1] Natl Yunlin Univ Sci & Technol, Grad Sch Elect Engn, Touliu 64002, Yunlin, Taiwan

[2] TransWorld Univ, Dept Informat & Elect Commerce Management, Touliu 64063, Yunlin, Taiwan

[3] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu 64002, Yunlin, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2018年 / 30卷 / 06期

关键词：

Energy band diagram; dye-sensitized solar cell; photovoltaic conversion efficiency; indium gallium zinc oxide; FILMS; TIO2;

D O I：

10.1109/LPT.2018.2800771

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the indium-gallium-zinc oxide (IGZO) had been applied to the photoelectrode for reducing dark reaction. According to the experimental results, the IGZO film formed an energy barrier to retard the recombination between photogenerated electron in active layer and hole (I-3(-)) in electrolyte. It contributes an enhancement of electron lifetime, decrease in dark reaction, and improvement in the short-circuit current density (J(SC)). Consequently, the photovoltaic conversion efficiency of dye-sensitized solar cell is enhanced from 3.34% to 5.47%. This enhancement has the potential to expand an electron device of photocatalyst.

引用

页码：521 / 524

页数：4

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