Photoluminescence from porous structures prepared by anodization of annealed Cz-Si

被引：0

作者：

Surma, B

Wnuk, A

Misiuk, A

Brzozowski, A

Pawlowska, M

Franz, M

Jun, J

Rozental, M

Nossarzewska-Orlowska, E

机构：

[1] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[3] Inst Halbleiterphys, Frankfurt, Germany

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1999年 / 34卷 / 5-6期

关键词：

porous silicon; oxygen precipitation; high pressure; photoluminescence; defects;

D O I：

10.1002/(SICI)1521-4079(199906)34:5/6<689::AID-CRAT689>3.0.CO;2-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The process of porous silicon, preparation from p-type Czochralski grown silicon,CZ-Si, subjected to different preanneal proceses was studied. It was found that defects generated by oxygen precipitation in the Ct-Si substrates can markedly influence the porous silicon preparation. Enhanced hydrostatic pressure of gas ambient during annealing of Ct-Si at 1350 degrees C leads to the generation of some extended defects in Ct-Si which affect photoluminescence from porous silicon obtained from such substrates. A relation between the concentration of defects in the Ct-Si substrates and the porous silicon structure and its photoluminescence was observed. Dependence of photoluminescence and porous silicon structure on the kind and concentration of oxygen related defects in the Ct-Si substrate was found.

引用

页码：689 / 697

页数：9

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