Structural stability and electronic properties of SiC nanocones: First-principles calculations and symmetry considerations

被引：11

作者：

Alfieri, G. ^{[1
]}

Kimoto, T. ^{[1
,2
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

[2] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Nishikyo Ku, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 12期

基金：

日本学术振兴会;

关键词：

AB-INITIO; CARBON;

D O I：

10.1063/1.3567535

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural and electronic properties of SiC nanocones (SiCNCs), as a function of the disclination angle and electric field intensity and orientation, are investigated by means of ab initio calculations. Phonon analysis revealed that SiCNCs with only three disclination angles are allowed and, among these, the band gap of only one SiCNC is affected by a transverse electric field. An interpretation of these findings, from a group theoretical point of view, is also given. (C) 2011 American Institute of Physics. [doi:10.1063/1.3567535]

引用

页数：3

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