Strain distribution in bent ZnO microwires

被引:44
作者
Dietrich, C. P. [1 ]
Lange, M. [1 ]
Kluepfel, F. J. [1 ]
von Wenckstern, H. [1 ]
Schmidt-Grund, R. [1 ]
Grundmann, M. [1 ]
机构
[1] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany
关键词
GROWTH;
D O I
10.1063/1.3544939
中图分类号
O59 [应用物理学];
学科分类号
摘要
ZnO microwires grown by carbothermal reduction were mechanically bent and the uniaxial stress state was studied with spatially resolved low-temperature photoluminescence. Inhomogeneous (tensile and compressive) stress (up to +/- 1 GPa) is visualized by the redshift and blueshift of the wire luminescence. Experimentally determined tensile and compressive strain along the c-axis (wire axis) of up to 1.5 %, symmetrically distributed with respect to the central axis (neutral fiber), is achieved, resulting in maximum energetic shifts of +/- 30 meV. Within these experiments, we are able to precisely determine the direct relation between energetic shift of the free A-exciton energy and strain to (-2.04 +/- 0.02) eV. (C) 2011 American Institute of Physics. [doi:10.1063/1.3544939]
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页数:3
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共 26 条
  • [1] ELASTIC MODULI OF SINGLE-CRYSTAL ZINC OXIDE
    BATEMAN, TB
    [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3309 - &
  • [2] Whispering gallery mode lasing in zinc oxide microwires
    Czekalla, Christian
    Sturm, Chris
    Schmidt-Grund, Ruediger
    Cao, Bingqiang
    Lorenz, Michael
    Grundmann, Marius
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (24)
  • [3] Mechanical properties of ZnO nanowires
    Desai, A. V.
    Haque, M. A.
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 2007, 134 (01) : 169 - 176
  • [4] On the enhanced electron mobility in strained-silicon inversion layers
    Fischetti, MV
    Gámiz, F
    Hänsch, W
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (12) : 7320 - 7324
  • [5] Nanoscroll formation from strained layer heterostructures
    Grundmann, M
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (12) : 2444 - 2446
  • [6] Growth of nanowire superlattice structures for nanoscale photonics and electronics
    Gudiksen, MS
    Lauhon, LJ
    Wang, J
    Smith, DC
    Lieber, CM
    [J]. NATURE, 2002, 415 (6872) : 617 - 620
  • [7] Electronic and Mechanical Coupling in Bent ZnO Nanowires
    Han, Xiaobing
    Kou, Liangzhi
    Lang, Xiaoli
    Xia, Jianbai
    Wang, Ning
    Qin, Rui
    Lu, Jing
    Xu, Jun
    Liao, Zhimin
    Zhang, Xinzheng
    Shan, Xudong
    Song, Xuefeng
    Gao, Jingyun
    Guo, Wanlin
    Yu, Dapeng
    [J]. ADVANCED MATERIALS, 2009, 21 (48) : 4937 - +
  • [8] Giant piezoresistance effect in silicon nanowires
    He, Rongrui
    Yang, Peidong
    [J]. NATURE NANOTECHNOLOGY, 2006, 1 (01) : 42 - 46
  • [9] Room-temperature ultraviolet nanowire nanolasers
    Huang, MH
    Mao, S
    Feick, H
    Yan, HQ
    Wu, YY
    Kind, H
    Weber, E
    Russo, R
    Yang, PD
    [J]. SCIENCE, 2001, 292 (5523) : 1897 - 1899
  • [10] Siticon device scaling to the sub-10-nm regime
    Leong, M
    Doris, B
    Kedzierski, J
    Rim, K
    Yang, M
    [J]. SCIENCE, 2004, 306 (5704) : 2057 - 2060