Application of sol-gel method in the synthesis of gallium(III)-oxide

被引:69
作者
Ristic, M
Popovic, S
Music, S
机构
[1] Rudjer Boskovic Inst, Div Mat Chem, HR-10002 Zagreb, Croatia
[2] Univ Zagreb, Fac Sci, Dept Phys, HR-10002 Zagreb, Croatia
关键词
sol-gel; alpha-GaOOH; alpha-Ga2O3; beta-Ga2O3; XRD; FT-IR; TEM;
D O I
10.1016/j.matlet.2004.11.055
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Precipitations by hydrolysis of gallium(III)-isopropoxide and from aqueous GaCl3 solution by addition of aqueous tetramethylammonium hydroxide (TMAH) solution were utilized to obtain gallium(III)-oxide precursors. The precursors thus formed and the samples obtained upon heating these precursors at high temperatures were analysed by XRD, FT-IR and TEM. Amorphous phase (dominant) and nanosized alpha-GaOOH particles (several nanometers in size) were obtained by addition of hot water and TMAH solution to the solution of gallium(Ill)isopropoxide dissolved in 2-propanol. A completely amorphous precipitate was obtained by hydrolysis of gallium(III)-isopropoxide with pure water at room temperature, and upon heating this precipitate at 500 degrees C the nanosized beta-Ga2O3 particles (size similar to 10 to 20 nm) were obtained. On the other hand, alpha-GaOOH particles, as a single phase, were obtained by precipitation from aqueous GaCl3 solution with addition of aqueous TMAH solution. These alpha-GaOOH particles transformed at 500 degrees C to alpha-Ga2O3 as a single phase. Upon heating at 900 degrees C, in all cases only beta-Ga2O3 was detected. The size and morphology of the particles in the samples investigated depended on the starting chemicals and the conditions of the experiment. Differences in the mechanism of the precipitation by hydrolysis of gallium(Ill)-isopropoxide or the precipitation from aqueous solution of GaCl3 by addition of strong organic alkali (TMAH) were suggested. (C) 2004 Elsevier B.V All rights reserved.
引用
收藏
页码:1227 / 1233
页数:7
相关论文
共 29 条
[21]   Large-scale synthesis of single-crystalline β-Ga2O3 nanoribbons, nanosheets and nanowires [J].
Li, JY ;
Chen, XL ;
Qiao, ZY ;
He, M ;
Li, H .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (48) :L937-L941
[22]   Investigation of the oxygen gas sensing performance of Ga2O3 thin films with different dopants [J].
Li, YX ;
Trinchi, A ;
Wlodarski, W ;
Galatsis, K ;
Kalantar-zadeh, K .
SENSORS AND ACTUATORS B-CHEMICAL, 2003, 93 (1-3) :431-434
[23]  
MUSIC S, 1979, RADIOCHIM ACTA, V26, P51
[24]  
NAZARENKO VA, 1968, ZH NEORG KHIM, V13, P1574
[25]   Structural investigation of gallium oxide (β-Ga2O3) nanowires grown by arc-discharge [J].
Park, GS ;
Choi, WB ;
Kim, JM ;
Choi, YC ;
Lee, YH ;
Lim, CB .
JOURNAL OF CRYSTAL GROWTH, 2000, 220 (04) :494-500
[26]   Synthesis of gallium oxide hydroxide crystals in aqueous solutions with or without urea and their calcination behavior [J].
Tas, AC ;
Majewski, PJ ;
Aldinger, F .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2002, 85 (06) :1421-1429
[27]   Mesostructured gallium oxides templated by dodecyl sulfate assemblies [J].
Yada, M ;
Takenaka, H ;
Machida, M ;
Kijima, T .
JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS, 1998, (10) :1547-1550
[28]   Catalytic growth of Ga2O3 nanowires by physical evaporation and their photoluminescence properties [J].
Zhang, J ;
Jiang, FH .
CHEMICAL PHYSICS, 2003, 289 (2-3) :243-249
[29]  
[No title captured]