Low level and reflection phase noise measurements on a FET

被引：5
作者：
Llopis, O
Juraver, JB
Cibiel, G
Graffeuil, J
机构：
[1] CNRS, LAAS, F-31077 Toulouse 04, France
[2] Univ Toulouse 3, F-31062 Toulouse, France
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 02期
关键词：
D O I：
10.1049/el:20010081
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The residual phase noise of a PHEMT device is studied in two unusual configurations: in transmission mode with a low input microwave power on the device, and in reflection mode. Measurements dearly reveal some fundamental aspects of the phase noise generation in this device: the phase noise is a modulation mechanism which still exists in the linear regime and in which the gate reactance fluctuations play an important role.
引用
收藏
页码：127 / 129
页数：3
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