Ionitronic manipulation of current-induced domain wall motion in synthetic antiferromagnets

Synthetic anti-ferromagnets, where two ferromagnetic layers are coupled anti-ferromagnetically via a spacer, are known for their very large current-induced domain wall velocities. Here, Guan et al show that the velocity of the domain walls in synthetic anti-ferromagnetic nanowires can be tuned over a wide range due to reversible oxidization via ionic liquid gating. The current induced motion of domain walls forms the basis of several advanced spintronic technologies. The most efficient domain wall motion is found in synthetic antiferromagnetic (SAF) structures that are composed of an upper and a lower ferromagnetic layer coupled antiferromagnetically via a thin ruthenium layer. The antiferromagnetic coupling gives rise to a giant exchange torque with which current moves domain walls at maximum velocities when the magnetic moments of the two layers are matched. Here we show that the velocity of domain walls in SAF nanowires can be reversibly tuned by several hundred m/s in a non-volatile manner by ionic liquid gating. Ionic liquid gating results in reversible changes in oxidation of the upper magnetic layer in the SAF over a wide gate-voltage window. This changes the delicate balance in the magnetic properties of the SAF and, thereby, results in large changes in the exchange coupling torque and the current-induced domain wall velocity. Furthermore, we demonstrate an example of an ionitronic-based spintronic switch as a component of a potential logic technology towards energy-efficient, all electrical, memory-in-logic.