10 milliwatt pulse operation of 265 nm AlGaN light emitting diodes

被引：50

作者：

Bilenko, Y

Lunev, A

Hu, XH

Deng, JY

Katona, TM

Zhang, JP

Gaska, R

Shur, MS

Sun, WH

Adivarahan, V

Shatalov, M

Khan, A

机构：

[1] Sensor Elect Technol Inc, Columbia, SC 29209 USA

[2] Rensselaer Polytech Inst, Broadband Ctr, ECSE, Troy, NY 12180 USA

[3] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 1-7期

关键词：

deep UV light emitting diodes; AlGaN; multiple-quantum-well; MEMOCVD;

D O I：

10.1143/JJAP.44.L98

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the development of solid-state deep ultraviolet light sources optimized for the germicidal applications. Pulsed power levels in excess of 10 mW were achieved for AlGaN based 265 nm light emitting diodes by improving the material quality using Migration-Enhanced Metal Organic Chemical Vapor Deposition. Packaged devices reached the continuous wave power of 237 mu W at 30 mA and a pulse power exceeding 10 mW for 1.2 A driving current.

引用

收藏

页码：L98 / L100

页数：3

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