Fabrication and characterization of Mn doped SnO2 thin films

被引：18

作者：

Kimura, H

Fukumura, T

Koinuma, H

Kawasaki, M

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] COMET, Tsukuba, Ibaraki 30500044, Japan

[3] Tokyo Inst Technol, Frontier Collaboat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[4] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2001年 / 10卷 / 1-3期

关键词：

epitaxial SnO2 thin films; d-d transition; transparent conductive oxide; diluted magnetic semiconductors;

D O I：

10.1016/S1386-9477(01)00096-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Epitaxial films of Mn doped SnO2 were fabricated with pulsed laser deposition method. Thin films with (1 0 1) and (1 0 0) orientations were grown on r-(1 1 0 2) and c-(0 0 0 1) sapphire substrates, respectively. Mn ions are soluble into SnO2 films up to 30 mol%. Transmission spectra show d-d transition absorption in mid-gap region due to presence of the Mn ion. Additional doping of Sb induces an n-type conduction with a carrier concentration as high as 6.9 x 10(19) cm(-3) at 300 K. The resistivity rapidly increases with decreasing the temperature below 50 K, where considerable increase of the resistivity is observed in a magnetic field below 20 K. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：265 / 267

页数：3

共 13 条

[1] LAYER-BY-LAYER GROWTH OF EPITAXIAL SNO2 ON SAPPHIRE BY REACTIVE SPUTTER DEPOSITION [J].