Current Sharing of Parallel SiC MOSFETs under Short Circuit Conditions

被引:0
作者
Wu, Ruizhu [1 ]
Mendy, Simon [1 ]
Gonzalez, Jose Ortiz [1 ]
Jahdi, Saeed [2 ]
Alatise, Olayiwola [1 ]
机构
[1] Univ Warwick, Sch Engn, Coventry, W Midlands, England
[2] Univ Bristol, Dept Elect & Elect Engn, Bristol, Avon, England
来源
2021 23RD EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'21 ECCE EUROPE) | 2021年
基金
英国工程与自然科学研究理事会;
关键词
Reliability; Semiconductor Device; Wide Bandgap Devices; Short Circuits; Paralleling;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Device-to-device parametric variations (e.g. threshold voltage VTH, gate resistance RG and junction temperature TJ) can cause variations in the short-circuit currents conducted through parallel-connected devices. In this paper, the impact of variations in VTH, RG and TJ on current sharing under short-circuits is investigated using measurements and electrothermal modelling. The results show that VTH is the most critical parameter affecting short-circuit current sharing and directly impacts the peak short circuit current. Variations in gate resistance do not impact the short circuit current sharing unless the variation is over 400% thereby indicating catastrophic failure of the gate wirebond. Variation in the initial junction temperature is also not as critical as variations in VTH since the higher temperature device takes less short circuit current. Electrothermal simulations of parallel connected SiC MOSFETs have been developed to analyze how VTH mismatch impacts short circuit current sharing. These simulations allow for the investigation of the impact of VTH mismatch on the electrothermal stresses of the parallel connected MOSFETs.
引用
收藏
页数:9
相关论文
共 20 条
[1]  
Agarwal A, 2019, 2019 IEEE 7TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA 2019), P59, DOI [10.1109/wipda46397.2019.8998839, 10.1109/WiPDA46397.2019.8998839]
[2]   Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs [J].
Aichinger, Thomas ;
Rescher, Gerald ;
Pobegen, Gregor .
MICROELECTRONICS RELIABILITY, 2018, 80 :68-78
[3]  
Baliga B. J., 2008, Fundamentals of Power Semiconductor Devices
[4]  
Boige F, 2019, EUR CONF POW ELECTR
[5]  
Ceccarelli L, 2017, IEEE IND ELEC, P4879, DOI 10.1109/IECON.2017.8216842
[6]   Investigation on Short-Circuit Characterization and Optimization of 3.3-kV SiC MOSFETs [J].
Chen, Ximing ;
Chen, Hong ;
Shi, Bangbing ;
Wang, Yafei ;
Li, Xuan ;
Zhou, Caineng ;
Li, Chenzhan ;
Deng, Xiaochuan ;
Luo, Haihui ;
Wu, Yudong ;
Zhang, Bo .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (01) :184-191
[7]   A Novel Non-Intrusive Technique for BTI Characterization in SiC MOSFETs [J].
Gonzalez, Jose Angel Ortiz ;
Alatise, Olayiwola .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 34 (06) :5737-5747
[8]   Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs [J].
Gonzalez, Jose Ortiz ;
Alatise, Olayiwola .
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2021, 57 (02) :1664-1676
[9]  
Kadavelugu A, 2017, 2017 IEEE 5TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), P285, DOI 10.1109/WiPDA.2017.8170561
[10]   Device Screening Strategy for Balancing Short-Circuit Behavior of Paralleling Silicon Carbide MOSFETs [J].
Ke, Junji ;
Zhao, Zhibin ;
Zou, Qi ;
Peng, Jiaoyang ;
Chen, Zhong ;
Cui, Xiang .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2019, 19 (04) :757-765