Scanning tunneling microscopy of the GaN(0001) surface

被引:11
作者
Packard, WE
Dow, JD
Nicolaides, R
Doverspike, K
Kaplan, R
机构
[1] INST POSTDOCTORAL STUDIES,ST JOHN,VI 00830
[2] USN,RES LAB,WASHINGTON,DC 20375
关键词
D O I
10.1006/spmi.1996.0060
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The wurtzite GaN(0001) surface is imaged by scanning tunneling microscopy. Terraces are observed with line-defect structures on them: primarily regularly spaced striations perpendicular to step edges. A model of these striations as ordered N-vacancies is presented. (C) 1996 Academic Press Limited
引用
收藏
页码:145 / 148
页数:4
相关论文
共 13 条
[1]   STIMULATED EMISSION AND LASER ACTION IN GALLIUM NITRIDE [J].
DINGLE, R ;
SHAKLEE, KL ;
LEHENY, RF ;
ZETTERSTROM, RB .
APPLIED PHYSICS LETTERS, 1971, 19 (01) :5-+
[2]   THE EFFECT OF GAN AND ALN BUFFER LAYERS ON GAN FILM PROPERTIES GROWN ON BOTH C-PLANE AND A-PLANE SAPPHIRE [J].
DOVERSPIKE, K ;
ROWLAND, LB ;
GASKILL, DK ;
FREITAS, JA .
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) :269-273
[3]   ROLE OF DANGLING BONDS AND ANTISITE DEFECTS IN RAPID AND GRADUAL III-V LASER DEGRADATION [J].
DOW, JD ;
ALLEN, RE .
APPLIED PHYSICS LETTERS, 1982, 41 (07) :672-674
[4]   RANDOM AND ORDERED DEFECTS ON ION-BOMBARDED SI(100)-(2X1) SURFACES [J].
FEIL, H ;
ZANDVLIET, HJW ;
TSAI, MH ;
DOW, JD ;
TSONG, IST .
PHYSICAL REVIEW LETTERS, 1992, 69 (21) :3076-3079
[5]   ELECTRONIC-STRUCTURES AND DOPING OF INN, INXGA1-XN, AND INXAL1-XN [J].
JENKINS, DW ;
DOW, JD .
PHYSICAL REVIEW B, 1989, 39 (05) :3317-3329
[6]   N-VACANCIES IN ALXGA1-XN [J].
JENKINS, DW ;
DOW, JD ;
TSAI, MH .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (09) :4130-4133
[7]   DEPOSITION AND SURFACE CHARACTERIZATION OF HIGH-QUALITY SINGLE-CRYSTAL GAN LAYERS [J].
KHAN, MA ;
KUZNIA, JN ;
OLSON, DT ;
KAPLAN, R .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (06) :3108-3110
[8]  
NEUGEBAUER J, 1995, B AM PHYS SOC, V40, P127
[9]   EXTERNALLY STRAINED SI(100) OBSERVED WITH SCANNING TUNNELING MICROSCOPY [J].
PACKARD, WE ;
DAI, N ;
DOW, JD ;
JAKLEVIC, RC ;
KAISER, WJ ;
TANG, SL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (04) :3512-3515
[10]  
PACKARD WE, IN PRESS VACANCY STR