Electrical properties of Al/Al4C3/4H-SiC diodes

被引：11

作者：

Kim, So-Mang ^{[1
]}

Koo, Sang-Mo ^{[1
]}

机构：

[1] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South Korea

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2018年 / 74卷

基金：

新加坡国家研究基金会;

关键词：

4 H SiC; Aluminum carbide; Diode; Electrical properties; Post annealing; SCHOTTKY; DIAMOND; VOLTAGE;

D O I：

10.1016/j.mssp.2017.10.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of aluminum carbide (Al4C3) at the metal/silicon-carbide (SiC) interface is presented here with respect to 4H-SiC Schottky barrier diodes (SBDs). A post-annealing process at a high temperature (1000 degrees C) has been employed for the reaction between the aluminum and the carbon. The current density of the fabricated device was measured as similar to 13.4 A/cm(2) at 5V with a leakage current density of less than -6.84 x 10(-9) A/cm2 at -5V. The thermal-activation energy (EA = 0.35 eV) extracted from the Arrhenius plot decreased by similar to 37% via the formation of the Al4C3. According to the experiment results, the sample with the Al4C3 layer yields a rectification ratio of 1.95 x 10(9) that is 33 times higher than that of the reference SBDs. The structural defects of the SiC interface may be available for the formation of the Al4C3 layer.

引用

页码：170 / 174

页数：5

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