Planar GaN Power Integration - The World is Flat

被引：53

作者：

Chen, Kevin J. ^{[1
]}

Wei, Jin ^{[1
]}

Tang, Gaofei ^{[1
]}

Xu, Han ^{[1
]}

Zheng, Zheyang ^{[1
]}

Zhang, Li ^{[1
]}

Song, Wenjie ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Clear Water Bay, Hong Kong, Peoples R China

来源：

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2020年

关键词：

D O I：

10.1109/IEDM13553.2020.9372069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN power IC's are expected to help unlock the full potential of GaN power electronics, especially in terms of promoting the high-frequency power switching applications. This paper first discusses a GaN power integration technology platform based on commercially available p-GaN gate HEMT technology. An integrated gate driver is presented as an example of GaN power IC with enhanced performance, in which a bootstrap unit is adopted to realize rail-to-rail output voltage and fast switching speed. To deal with GaN-specific design issues such as the unique dynamic VTH, a SPICE model of p-GaN gate HEMT is developed to improve design accuracy. Future prospects for GaN power integration are discussed by extending the integration's landscape to multi-functional GaN power devices, GaN CMOS technology, and GaN/SiC hybrid power IC's.

引用

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