Self-trapping transition of acoustic polaron in free-standing square quantum dots

被引:0
作者
Duan, X. F.
Hou, J. H. [1 ]
机构
[1] Shanxi Normal Univ, Coll Phys & Informat Engn, Linfen 041004, Peoples R China
来源
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2017年 / 11卷 / 7-8期
关键词
Quantum dot; Electron-longitudinal acoustic-phonon interaction; Acoustic polaron; Self-trapping; DISCONTINUITY; STATE; GAN;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The interaction of the electron and acoustic phonon in free-standing square quantum dot systems is investigated theoretically. The electron-acoustic phonon interaction Hamiltonian is derived by taking the displacement vector's divergence of the acoustic phonon. The variational ground-state energies and their derivatives of the acoustic polaron in square quantum dot structures are numerically computed for different cutoff wave-vectors. The discriminating standards for the self-trapping transition of the acoustic polaron in square quantum dots are confirmed quantitatively. The results indicate that the self-trapping transition of the electron in wide-band-gap semiconductors and alkali halides square quantum dot structures might be occured.
引用
收藏
页码:436 / 439
页数:4
相关论文
共 28 条
[1]  
Alexandrov A. S., 2009, ADV POLARON PHYS
[2]  
[Anonymous], 2001, PHONONS NANOSTRUCTUR, DOI DOI 10.1017/CBO9780511534898.004
[3]   Novel dielectric materials for future transistor generations [J].
Bersuker, Gennadi ;
Lee, Byoung H. ;
Korkin, Anatoli ;
Huff, Howard R. .
NANOTECHNOLOGY FOR ELECTRONIC MATERIALS AND DEVICES, 2007, :199-+
[4]   CHARGING AND FLASHOVER INDUCED BY SURFACE POLARIZATION RELAXATION PROCESS [J].
BLAISE, G ;
LEGRESSUS, C .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (09) :6334-6339
[5]   Ab initio phonon dispersions of wurtzite AlN, GaN, and InN [J].
Bungaro, C ;
Rapcewicz, K ;
Bernholc, J .
PHYSICAL REVIEW B, 2000, 61 (10) :6720-6725
[6]   Localization of acoustic polarons at low temperatures: A path-integral Monte Carlo approach [J].
Fantoni, Riccardo .
PHYSICAL REVIEW B, 2012, 86 (14)
[7]   The measurement of optoelectrons lifetime in imaging process of silver halide material [J].
Fu, GS ;
Yang, SP ;
Li, XW ;
Hu, XY .
SEMICONDUCTOR OPTOELECTRONIC DEVICE MANUFACTURING AND APPLICATIONS, 2001, 4602 :339-343
[8]  
Gorban T. S., 1994, P SOC PHOTO-OPT INS, V2113, P173
[9]  
Hou J. H., CHIN PHYS, V16, P3059
[10]  
Hou JH, 2007, CHINESE PHYS LETT, V24, P3222