Epitaxial properties of Al-doped ZnO thin films grown by pulsed laser deposition on SrTiO3(001) -: art. no. 075304

被引：44

作者：

Karger, M ^{[1
]}

Schilling, M ^{[1
]}

机构：

[1] Tech Univ Braunschweig, Inst Elekt Messtech & Grundlagen Elektrotech, D-38106 Braunschweig, Germany

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.71.075304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Undoped and Al-doped ZnO films with dopant concentrations of nominally 1% and 10% and a thickness of 100 ran have been grown on SrTiO3(001) by pulsed laser deposition at substrate temperatures between 650 degrees C and 820 degrees C. The epitaxial conditions were examined with high pressure in-situ reflection high energy electron diffraction (RHEED) and ex-situ x-ray diffraction (XRD) measurements in different geometries. The films are highly (1120)-oriented with a lattice mismatch between the SrTiO3[110] direction and the c-axis of about 3%. Atomic force microscopy (AFM) revealed smooth surfaces with a roughness of d(rms) < 5 nm and different sized islands.

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