Localized laser assisted eutectic bonding of quartz and silicon by Nd:YAG pulsed-laser

被引：35

作者：

Tan, AWY ^{[1
]}

Tay, FEH ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Engn Mech, Singapore 119260, Singapore

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2005年 / 120卷 / 02期

关键词：

laser bonding; packaging; eutectic; low temperature; single crystal quartz-to-silicon; gold-tin;

D O I：

10.1016/j.sna.2004.11.035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A localized laser assisted eutectic bonding process to bond 80 mu m thick single crystal quartz chips to silicon substrates has been successfully developed and characterized. The two bond partners are bonded via intermediate layers of Cr, Au and Sn, with the composition of Au:Sn set close to 80:20 wt.%. Laser light source from the Nd:YAG Q-switched laser processing system with a wavelength of 355 nm, a spot diameter of 25 mu m and variable power up to a maximum of 2 W is used as the energy source to initiate bonding at any user-defined region(s). Effects of important laser process parameters, such as laser power, scanning velocity and repetition rate on bond strength, interface quality and heat affected zones are investigated and documented. The resultant bonds are forcefully pulled apart to measure their bond strength. Optimal mean bond strength of 15.14 MPa is recorded for 355 nm wavelength at parameters combinations with highest laser power within the fluence window and low scanning velocity. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：550 / 561

页数：12

共 29 条

[1]

[Anonymous], J APPL PHYS B

[2]

BUDRAA NK, 1909, IEEE INT C MICROELEC, P490

[3] Vacuum packaging technology using localized aluminum/silicon-to-glass bonding [J].

Cheng, YT ;

Hsu, WT ;

Najafi, K ;

Nguyen, CTC ;

Lin, LW .

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2002, 11 (05) :556-565

[4] Localized silicon fusion and eutectic bonding for MEMS fabrication and packaging [J].

Cheng, YT ;

Lin, LW ;

Najafi, K .

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2000, 9 (01) :3-8

[5]

COHN MB, 1996, P IEEE SOL STAT SENS, P32

[6] A review of thirty-five years of laser trimming with a look to the future [J].

Deluca, P .

PROCEEDINGS OF THE IEEE, 2002, 90 (10) :1614-1619

[7]

Duley W.W., 1999, LASER WELDING

[8]

Esashi M., 1994, MICROSYST TECHNOL, V1, P2

[9]

HE GH, 1999, P 10 INT C SOL STAT, P1312

[10] VOID-FREE SILICON-WAFER-BOND STRENGTHENING IN THE 200-400 DEGREES-C RANGE [J].

KISSINGER, G ;

KISSINGER, W .

SENSORS AND ACTUATORS A-PHYSICAL, 1993, 36 (02) :149-156

← 1 2 3 →