Annealing properties of ZnO films grown using diethyl zinc and tertiary butanol

被引:18
作者
Wang, JZ [1 ]
Peres, M
Soares, J
Gorochov, O
Barradas, NP
Alves, E
Lewis, JE
Fortunato, E
Neves, A
Monteiro, T
机构
[1] Univ Aveiro, Dept Phys, P-3810193 Aveiro, Portugal
[2] CNRS, LPSC, F-92195 Meudon, France
[3] Inst Tecnol & Nucl, P-2685953 Sacavem, Portugal
[4] SUNY Coll Plattsburgh, Dept Phys, Plattsburgh, NY 12901 USA
[5] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT, P-2829516 Caparica, Portugal
关键词
D O I
10.1088/0953-8984/17/10/026
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
ZnO films were grown by atmospheric metal-organic chemical vapour deposition and annealed at 900 degrees C in an. oxygen environment. The annealing properties of the films have been characterized by means of x-ray diffraction, Raman scattering, Rutherford backscattering, (RBS), elastic recoil detection analysis (ERDA) and photoluminescence, spectra. The,results indicate that high crystal quality ZnO film has been obtained after annealing. The full width at half-maximum of omega rocking curves is only 369 arcsec. The Raman spectra show a strong high frequency E-2 mode peak comparable to that forlbulk ZnO. high The intensity ratio of the E-1 (LO) peak to E-2(high) peak before annealing is 0.81 and after annealing 0.75. RBS and ERDA spectra indicate that a stoichiometric ZnO film is formed and the annealing only changes the H content in the ZnO film. After annealing all emission lines become sharper, as expected, which means a higher quality film has been obtained.
引用
收藏
页码:1719 / 1724
页数:6
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