Preparation of CuInSe2 film with electrodeposition

被引：0

作者：

Li, WY ^{[1
]}

Yu, J ^{[1
]}

Yu, XB ^{[1
]}

Chen, QL ^{[1
]}

Cai, X ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Minist Educ High Temp Mat & Testing, Open Lab, Shanghai 200030, Peoples R China

来源：

FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 2000年 / 4086卷

关键词：

CuInSe2; electrodeposition; thin film;

D O I：

10.1117/12.408435

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

CuInSe2(CIS) films directly electrodeposited on sputtered Mo-glass, sprayed SnO2-glass substrates had been accomplished at room temperature in the potentionstatic mode from a bath containing CuCl, InCl3. 4H(2)O and SeO2. The acidity of bath was adjusted to 1PH. Energy dispersive spectrometry (EDS), Atomic force microscopy (AFM), x-ray diffraction (XRD) and hot-probe method was utilized to characterize the CIS films. The key factor for preparing single-phase CuInSe2 is the proportion of CuCl, InCl3. 4H(2)O and SeO2. The CIS films are nearly stoichiometry of CuInSe2 and polycrystalline on Mo-glass. The Cu excess films are p-type semiconducter, and the In excess films n-type. The deposition potential obviously affects the surface morphology of CIS films. AFM results had indicated that the CIS films on Mo-glass grow in layer and on SnO2 glass in island.

引用

页码：217 / 220

页数：4

共 3 条

[1] SiO2 sol-gel-coated conducting substrates for CuInSe2 electrodeposition [J].