Characterization of scanning tunneling microscopy and atomic force microscopy-based techniques for nanolithography on hydrogen-passivated silicon

A comparison between scanning tunneling microscope (STM) and atomic force microscope (AFM) nanolithography techniques based on local oxidation of silicon is proposed. This work deals with the three different near-field microscopy techniques, namely, STM, AFM in contact mode (CM-BFM), and tapping mode (TM-AFM), all of them operated in air. The thickness and width of oxide stripes are studied as a function of the applied probe-sample voltage, the speed of the probe and the setpoint (current, applied force, and vibration amplitude for STM, AFM contact, and tapping, respectively). The advantages and drawbacks of each technique are analyzed, establishing TM-AFM as the best candidate for scanning probe microscope nanolithography. (C) 1998 American Institute of Physics. [S0021-8979(98)05516-9]